ASRock H610M-ITX/eDP User Manual - Page 57
RAS# Active Time tRAS, Write Recovery Time tWR
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H610M-ITX/eDP DRAM Timing Configuration DRAM Reference Clock Select Auto for optimized settings. DRAM Frequency If [Auto] is selected, the motherboard will detect the memory module(s) inserted and assign the appropriate frequency automatically. DRAM Gear Mode High gear is good for high frequency. Primary Timing CAS# Latency (tCL) The time between sending a column address to the memory and the beginning of the data in response. RAS# to CAS# Delay (tRCD) The number of clock cycles required between the opening of a row of memory and accessing columns within it. Row Precharge (tRP) The number of clock cycles required between the issuing of the precharge command and opening the next row. RAS# Active Time (tRAS) The number of clock cycles required between a bank active command and issuing the precharge command. Command Rate (CR) The delay between when a memory chip is selected and when the first active command can be issued. Secondary Timing Write Recovery Time (tWR) The amount of delay that must elapse after the completion of a valid write operation, before an active bank can be precharged. Refresh Cycle Time (tRFC) 49 English