EVGA 132-CK-NF79-TR User Manual - Page 92

Row Address Strobe, Write Recovery Time, W to R Termination Turnaround

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Using NVIDIA Software ‰ Row Address Strobe Adjusts the minimum RAS active time. This is the amount of time between a row being activated by Precharge and deactivated. A row cannot be deactivated until tRAS has completed. The lower this value, the faster the performance. However, if it is set too low it can cause data corruption by deactivating the row to soon. Adjustable from 1 to 63. ‰ Write Recovery Time Memory timing that determines the delay between a write command and a Precharge command is set to the same bank of memory. Adjustable from 1 to 15. ‰ W to R Termination Turnaround The Write-to-Read time is the number of clock cycles between the last EVGA Corporation January 11, 2008 | DU-03751-001_v01 81

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Using NVIDIA Software
EVGA Corporation
January 11, 2008
|
DU-03751-001_v01
81
Row Address Strobe
Adjusts the minimum RAS active time. This is the amount of time
between a row being activated by Precharge and deactivated. A row
cannot be deactivated until tRAS has completed. The lower this value,
the faster the performance. However, if it is set too low it can cause data
corruption by deactivating the row to soon. Adjustable from 1 to 63.
Write Recovery Time
Memory timing that determines the delay between a write command and
a Precharge command is set to the same bank of memory. Adjustable
from 1 to 15.
W to R Termination Turnaround
The Write-to-Read time is the number of clock cycles between the last