Gigabyte GA-MA785GMT-US2H Manual - Page 43

RAS to RAS Delay - ga ud2h manual

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Trfc3 for DIMM4 Options are: Auto (default), 90ns, 110ns, 160ns, 300ns, 350ns. Write Recovery Time Options are: Auto (default), 5T~8T, 10T, 12T. Precharge Time Options are: Auto (default), 4T~7T. Row Cycle Time Options are: Auto (default), 11T~42T. RAS to RAS Delay Options are: Auto (default), 4T~7T. Bank Interleaving Enables or disables memory bank interleaving. Enabled allows the system to simultaneously access different banks of the memory to increase memory performance and stability. (Default: Enabled) Channel interleave Enables or disables memory channel interleaving. Enabled allows the system to simultaneously access different channels of the memory to increase memory performance and stability. (Default: Enabled) ******** System Voltage Optimized ******** System Voltage Control Determines whether to manually set the system voltages. Auto lets the BIOS automatically set the system voltages as required. Manual allows all voltage control items below to be configurable. (Default: Manual) DDR3 Voltage Control Allows you to set memory voltage. Normal Supplies the memory voltage as required. (Default) +0.050V ~ +0.750V Increases memory voltage by 0.050V to 0.750V at 0.05V increment. Note: Increasing memory voltage may result in damage to the memory. NorthBridge Volt Control Allows you to set the North Bridge voltage. Normal Supplies the North Bridge voltage as required. (Default) +0.1V ~ +0.3V Increases North Bridge voltage by 0.1V to 0.3V at 0.1V increment. SouthBridge Volt Control Allows you to set the South Bridge voltage. Normal Supplies the South Bridge voltage as required. (Default) -0.1V ~ +0.2V Increases South Bridge voltage by -0.1V to 0.2V at 0.1V increment. SidePort Mem Volt Controlj Allows you to set the SidePort memory voltage. Normal Supplies the SidePort memory voltage as required. (Default) +0.1V ~ +0.3V Increases SidePort memory voltage by 0.1V to 0.3V at 0.1V increment. j Only for GA-MA785GPMT-UD2H. - 43 - BIOS Setup

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- 43 -
BIOS Setup
Trfc3 for DIMM4
Options are: Auto (default), 90ns, 110ns, 160ns, 300ns, 350ns.
Write Recovery Time
Options are: Auto (default), 5T~8T, 10T, 12T.
Precharge Time
Options are: Auto (default), 4T~7T.
Row Cycle Time
Options are: Auto (default), 11T~42T.
RAS to RAS Delay
Options are: Auto (default), 4T~7T.
Bank Interleaving
Enables or disables memory bank interleaving.
Enabled
allows the system to simultaneously access dif-
ferent banks of the memory to increase memory performance and stability. (Default: Enabled)
Channel interleave
Enables or disables memory channel interleaving.
Enabled
allows the system to simultaneously access
different channels of the memory to increase memory performance and stability. (Default: Enabled)
********
System Voltage Optimized
********
System Voltage Control
Determines whether to manually set the system voltages.
Auto
lets the BIOS automatically set the
system voltages as required.
Manual
allows all voltage control items below to be configurable. (Default:
Manual)
DDR3 Voltage Control
Allows you to set memory voltage.
Normal
Supplies the memory voltage as required. (Default)
+0.050V ~ +0.750V
Increases memory voltage by 0.050V to 0.750V at 0.05V increment.
Note:
Increasing memory voltage may result in damage to the memory.
NorthBridge Volt Control
Allows you to set the North Bridge voltage.
Normal
Supplies the North Bridge voltage as required. (Default)
+0.1V ~ +0.3V
Increases North Bridge voltage by 0.1V to 0.3V at 0.1V increment.
SouthBridge Volt Control
Allows you to set the South Bridge voltage.
Normal
Supplies the South Bridge voltage as required. (Default)
-0.1V ~ +0.2V
Increases South Bridge voltage by -0.1V to 0.2V at 0.1V increment.
SidePort Mem Volt Control
j
Allows you to set the SidePort memory voltage.
Normal
Supplies the SidePort memory voltage as required. (Default)
+0.1V ~ +0.3V
Increases SidePort memory voltage by 0.1V to 0.3V at 0.1V increment.
j
Only for GA-MA785GPMT-UD2H.