ASRock B660M-ITX/eDP User Manual - Page 57

Write Recovery Time tWR, DRAM Timing Configuration

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B660M-ITX/eDP Memory Information Allows users to browse the serial presence detect (SPD) and Intel extreme memory profile (XMP) for DDR4 modules. DRAM Timing Configuration DRAM Reference Clock Select Auto for optimized settings. DRAM Frequency If [Auto] is selected, the motherboard will detect the memory module(s) inserted and assign the appropriate frequency automatically. DRAM Gear Mode High gear is good for high frequency. Primary Timing CAS# Latency (tCL) The time between sending a column address to the memory and the beginning of the data in response. RAS# to CAS# Delay (tRCD) The number of clock cycles required between the opening of a row of memory and accessing columns within it. Row Precharge (tRP) The number of clock cycles required between the issuing of the precharge command and opening the next row. RAS# Active Time (tRAS) The number of clock cycles required between a bank active command and issuing the precharge command. Command Rate (CR) The delay between when a memory chip is selected and when the first active command can be issued. Secondary Timing Write Recovery Time (tWR) 49 English

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49
English
B660M-ITX/eDP
Memory Information
Allows users to browse the serial presence detect (SPD) and Intel extreme memory profile
(XMP) for DDR4 modules.
DRAM Timing Configuration
DRAM Reference Clock
Select Auto for optimized settings.
DRAM Frequency
If [Auto] is selected, the motherboard will detect the memory module(s) inserted
and assign the appropriate frequency automatically.
DRAM Gear Mode
High gear is good for high frequency.
Primary Timing
CAS# Latency (tCL)
°e time between sending a column address to the memory and the beginning of the data
in response.
RAS# to CAS# Delay (tRCD)
°e number of clock cycles required between the opening of a row of memory and
accessing columns within it.
Row Precharge (tRP)
°e number of clock cycles required between the issuing of the precharge command and
opening the next row.
RAS# Active Time (tRAS)
°e number of clock cycles required between a bank active command and issuing the
precharge command.
Command Rate (CR)
°e delay between when a memory chip is selected and when the first active command can
be issued.
Secondary Timing
Write Recovery Time (tWR)