ASRock B760 Pro RS Software/BIOS Setup Guide - Page 41
RAS to RAS Delay tRRD_L, Write to Read Delay tWTR_L
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Intel Z790/H770/B760 Series Row Precharge (tRP) The number of clock cycles required between the issuing of the precharge command and opening the next row. RAS# Active Time (tRAS) The number of clock cycles required between a bank active command and issuing the precharge command. Command Rate (CR) The delay between when a memory chip is selected and when the first active command can be issued. Secondary Timing Write Recovery Time (tWR) The amount of delay that must elapse after the completion of a valid write operation, before an active bank can be precharged. Refresh Cycle Time 2 (tRFC2) The number of clocks from a Refresh command until the first Activate command to the same rank. Refresh Cycle Time per Bank (tRFCpb) The number of clocks from a Refresh command (per bank) until the first Activate command to the same rank. RAS to RAS Delay (tRRD_L) The number of clocks between two rows activated in different banks of the same rank. RAS to RAS Delay (tRRD_S) The number of clocks between two rows activated in different banks of the same rank. Write to Read Delay (tWTR_L) The number of clocks between the last valid write operation and the next read command to the same internal bank. Write to Read Delay (tWTR_S) The number of clocks between the last valid write operation and the next read command to the same internal bank. 37