ASRock Fatal1ty Z270 Gaming K4 User Manual - Page 63

DRAM Timing Configuration, RAS# Active Time tRAS

Page 63 highlights

Fatal1ty Z270 Gaming K4 Series DRAM Configuration DRAM Tweaker Fine tune the DRAM settings by leaving marks in checkboxes. Click OK to confirm and apply your new settings. Load XMP Setting Load XMP settings to overclock the memory and perform beyond standard specifications DRAM Timing Configuration DRAM Frequency If [Auto] is selected, the motherboard will detect the memory module(s) inserted and assign the appropriate frequency automatically. Primary Timing CAS# Latency (tCL) The time between sending a column address to the memory and the beginning of the data in response. RAS# to CAS# Delay and Row Precharge (tRCDtRP) RAS# to CAS# Delay : The number of clock cycles required between the opening of a row of memory and accessing columns within it. Row Precharge: The number of clock cycles required between the issuing of the precharge command and opening the next row. RAS# Active Time (tRAS) The number of clock cycles required between a bank active command and issuing the precharge command. Command Rate (CR) The delay between when a memory chip is selected and when the first active command can be issued. Secondary Timing Write Recovery Time (tWR) The amount of delay that must elapse after the completion of a valid write operation, before an active bank can be precharged. Refresh Cycle Time (tRFC) 55 English

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English
55
Fatal1ty Z270 Gaming K4 Series
DRAM Configuration
DRAM Tweaker
Fine tune the DRAM settings by leaving marks in checkboxes. Click OK to confirm and
apply your new settings.
Load XMP Setting
Load XMP settings to overclock the memory and perform beyond standard specifications
DRAM Timing Configuration
DRAM Frequency
If [Auto] is selected, the motherboard will detect the memory module(s) inserted
and assign the appropriate frequency automatically.
Primary Timing
CAS# Latency (tCL)
°e time between sending a column address to the memory and the beginning of the data
in response.
RAS# to CAS# Delay and Row Precharge (tRCDtRP)
RAS# to CAS# Delay : °e number of clock cycles required between the opening of a row
of memory and accessing columns within it.
Row Precharge: °e number of clock cycles required between the issuing of the precharge
command and opening the next row.
RAS# Active Time (tRAS)
°e number of clock cycles required between a bank active command and issuing the
precharge command.
Command Rate (CR)
°e delay between when a memory chip is selected and when the first active command can
be issued.
Secondary Timing
Write Recovery Time (tWR)
°e amount of delay that must elapse aſter the completion of a valid write operation,
before an active bank can be precharged.
Refresh Cycle Time (tRFC)