ASRock H170M-ITX/ac User Manual - Page 52
Write to Read Delay tWTR_L
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H170M-ITX/ac Primary Timing CAS# Latency (tCL) he time between sending a column address to the memory and the beginning of the data in response. RAS# to CAS# Delay and Row Precharge (tRCDtRP) O RAS# to CAS# Delay : he number of clock cycles required between the opening of a row of memory and accessing columns within it. Row Precharge: he number of clock cycles required between the issuing of the precharge command and opening the next row. RAS# Active Time (tRAS) he number of clock cycles required between a bank active command and issuing the precharge command. Command Rate (CR) he delay between when a memory chip is selected and when the irst active command can be issued. Secondary Timing Write Recovery Time (tWR) he amount of delay that must elapse ater the completion of a valid write operation, before an active bank can be precharged. Refresh Cycle Time (tRFC) he number of clocks from a Refresh command until the irst Activate command to the same rank. RAS to RAS Delay (tRRD_L) he number of clocks between two rows activated in diferent banks of the same rank. RAS to RAS Delay (tRRD_S) he number of clocks between two rows activated in diferent banks of the same rank. Write to Read Delay (tWTR_L) he number of clocks between the last valid write operation and the next read command to the same internal bank. 47 English