ASRock H170M Pro4S User Manual - Page 57
Odt Park Ch B
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tMOD Conigure tMOD. ZQCS_period Conigure ZQCS_period. tZQCS Conigure tZQCS. Advanced Setting ODT WR (CH A) Conigure the memory on die termination resistors' WR for channel A. ODT WR (CH B) Conigure the memory on die termination resistors' WR for channel B. ODT PARK (CH A) Conigure the memory on die termination resistors' PARK for channel A. ODT PARK (CH B) Conigure the memory on die termination resistors' PARK for channel B. ODT NOM (CH A) Use this to change ODT (CH A) Auto/Manual settings. he default is [Auto]. ODT NOM (CH B) Use this to change ODT (CH B) Auto/Manual settings. he default is [Auto]. MRC Fast Boot Enable Memory Fast Boot to skip DRAM memory training for booting faster. Voltage Coniguration CPU Ofset Voltage(mV) Conigure the voltage for the CPU. Please note that the system may be damaged or reduce its life cycle when overvoltage occurs. DRAM Voltage (1.200V) Use this to conigure DRAM Voltage. he default value is [Auto]. 52 English