ASRock H470M-HVS R2.0 User Manual - Page 46

IO-L Offset CH B

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RTL (CH A) Configure round trip latency for channel A. RTL (CH B) Configure round trip latency for channel B. IO-L (CH A) Configure IO latency for channel A. IO-L (CH B) Configure IO latency for channel B. IO-L Offset (CH A) Configure IO latency offset for channel A. IO-L Offset (CH B) Configure IO latency offset for channel B. RFR Delay (CH A) Configure RFR Delay for Channel A. RFR Delay (CH B) Configure RFR Delay for Channel B. ODT Setting ODT WR (A1) Configure the memory on die termination resistors' WR for channel A1. ODT WR (B1) Configure the memory on die termination resistors' WR for channel B1. ODT NOM (A1) Use this to change ODT (CH A1) Auto/Manual settings. The default is [Auto]. ODT NOM (B1) Use this to change ODT (CH B1) Auto/Manual settings. The default is [Auto]. ODT PARK (A1) Configure the memory on die termination resistors' PARK for channel A1. 42 English

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English
42
RTL (CH A)
Configure round trip latency for channel A.
RTL (CH B)
Configure round trip latency for channel B.
IO-L (CH A)
Configure IO latency for channel A.
IO-L (CH B)
Configure IO latency for channel B.
IO-L Offset (CH A)
Configure IO latency offset for channel A.
IO-L Offset (CH B)
Configure IO latency offset for channel B.
RFR Delay (CH A)
Configure RFR Delay for Channel A.
RFR Delay (CH B)
Configure RFR Delay for Channel B.
ODT Setting
ODT WR (A1)
Configure the memory on die termination resistors' WR for channel A1.
ODT WR (B1)
Configure the memory on die termination resistors' WR for channel B1.
ODT NOM (A1)
Use this to change ODT (CH A1) Auto/Manual settings. °e default is [Auto].
ODT NOM (B1)
Use this to change ODT (CH B1) Auto/Manual settings. °e default is [Auto].
ODT PARK (A1)
Configure the memory on die termination resistors' PARK for channel A1.