ASRock Z590 Phantom Gaming-ITX/TB4 User Manual - Page 67

RAS to RAS Delay tRRD_S

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Z590 Phantom Gaming-ITX/TB4 RAS# to CAS# Delay : The number of clock cycles required between the opening of a row of memory and accessing columns within it. Row Precharge: The number of clock cycles required between the issuing of the precharge command and opening the next row. RAS# Active Time (tRAS) The number of clock cycles required between a bank active command and issuing the precharge command. Command Rate (CR) The delay between when a memory chip is selected and when the first active command can be issued. Secondary Timing Write Recovery Time (tWR) The amount of delay that must elapse after the completion of a valid write operation, before an active bank can be precharged. Refresh Cycle Time (tRFC) The number of clocks from a Refresh command until the first Activate command to the same rank. RAS to RAS Delay (tRRD_L) The number of clocks between two rows activated in different banks of the same rank. RAS to RAS Delay (tRRD_S) The number of clocks between two rows activated in different banks of the same rank. Write to Read Delay (tWTR_L) The number of clocks between the last valid write operation and the next read command to the same internal bank. Write to Read Delay (tWTR_S) The number of clocks between the last valid write operation and the next read command to the same internal bank. Read to Precharge (tRTP) The number of clocks that are inserted between a read command to a row pre- 59 English

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English
Z590 Phantom Gaming-ITX/TB4
RAS# to CAS# Delay : °e number of clock cycles required between the opening of a row
of memory and accessing columns within it.
Row Precharge: °e number of clock cycles required between the issuing of the precharge
command and opening the next row.
RAS# Active Time (tRAS)
°e number of clock cycles required between a bank active command and issuing the
precharge command.
Command Rate (CR)
°e delay between when a memory chip is selected and when the first active command can
be issued.
Secondary Timing
Write Recovery Time (tWR)
°e amount of delay that must elapse aſter the completion of a valid write operation,
before an active bank can be precharged.
Refresh Cycle Time (tRFC)
°e number of clocks from a Refresh command until the first Activate command to
the same rank.
RAS to RAS Delay (tRRD_L)
°e number of clocks between two rows activated in different banks of the same
rank.
RAS to RAS Delay (tRRD_S)
°e number of clocks between two rows activated in different banks of the same
rank.
Write to Read Delay (tWTR_L)
°e number of clocks between the last valid write operation and the next read command to
the same internal bank.
Write to Read Delay (tWTR_S)
°e number of clocks between the last valid write operation and the next read command to
the same internal bank.
Read to Precharge (tRTP)
°e number of clocks that are inserted between a read command to a row pre-