ASRock Z590 Taichi User Manual - Page 96

ODT NOM B1

Page 96 highlights

RTL (B2 Rank1) Configure round trip latency. RTL (B2 Rank2) Configure round trip latency. ODT Setting ODT WR (A1) Configure the memory on die termination resistors' WR for channel A1. ODT WR (A2) Configure the memory on die termination resistors' WR for channel A2. ODT WR (B1) Configure the memory on die termination resistors' WR for channel B1. ODT WR (B2) Configure the memory on die termination resistors' WR for channel B2. ODT NOM (A1) Use this to change ODT (CH A1) Auto/Manual settings. The default is [Auto]. ODT NOM (A2) Use this to change ODT (CH A2) Auto/Manual settings. The default is [Auto]. ODT NOM (B1) Use this to change ODT (CH B1) Auto/Manual settings. The default is [Auto]. ODT NOM (B2) Use this to change ODT (CH B2) Auto/Manual settings. The default is [Auto]. ODT PARK (A1) Configure the memory on die termination resistors' PARK for channel A1. ODT PARK (A2) Configure the memory on die termination resistors' PARK for channel A2. ODT PARK (B1) Configure the memory on die termination resistors' PARK for channel B1. 88 English

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English
88
RTL (B2 Rank1)
Configure round trip latency.
RTL (B2 Rank2)
Configure round trip latency.
ODT Setting
ODT WR (A1)
Configure the memory on die termination resistors' WR for channel A1.
ODT WR (A2)
Configure the memory on die termination resistors' WR for channel A2.
ODT WR (B1)
Configure the memory on die termination resistors' WR for channel B1.
ODT WR (B2)
Configure the memory on die termination resistors' WR for channel B2.
ODT NOM (A1)
Use this to change ODT (CH A1) Auto/Manual settings. °e default is [Auto].
ODT NOM (A2)
Use this to change ODT (CH A2) Auto/Manual settings. °e default is [Auto].
ODT NOM (B1)
Use this to change ODT (CH B1) Auto/Manual settings. °e default is [Auto].
ODT NOM (B2)
Use this to change ODT (CH B2) Auto/Manual settings. °e default is [Auto].
ODT PARK (A1)
Configure the memory on die termination resistors' PARK for channel A1.
ODT PARK (A2)
Configure the memory on die termination resistors' PARK for channel A2.
ODT PARK (B1)
Configure the memory on die termination resistors' PARK for channel B1.