MSI 661FM2 User Guide - Page 47

DRAM Timing Control, DRAM CAS Latency, RAS Active Time tRAS, RAS Precharge Time tRP

Page 47 highlights

MS-7060 Micro ATX Mainboard DRAM Timing Control This field allows you to select the DRAM timing setting. Setting to [By SPD] enables Max Memclock (Mhz) automatically to be determined by SPD. Selecting [Manual] allows users to configure these fields manually. DRAM CAS Latency When the DRAM Timing Control is set to [Manual], this field is adjustable. The field controls the CAS latency, which determines the timing delay before SDRAM starts a read command after receiving it. Setting options: [2T], [2.5T], [3T]. [2T] increases system performance while [3T] provides more stable system performance. RAS Active Time (tRAS) When the DRAM Timing Control is set to [Manual], this field is adjustable. This setting determines the time RAS takes to read from and write to a memory cell. Setting options: [4T] to [9T]. RAS Precharge Time (tRP) When the DRAM Timing Control is set to [Manual], this field is adjustable. This setting controls the number of cycles for Row Address Strobe (RAS) to be allowed to precharge. If insufficient time is allowed for the RAS to accumulate its charge before DRAM refresh, refreshing may be incomplete and DRAM may fail to retain data. This item applies only when synchronous DRAM is installed in the system. Setting options: [2T] to [5T]. RAS to CAS Delay (tRCD) When the DRAM Timing Control is set to [Manual], this field is adjustable. When DRAM is refreshed, both rows and columns are addressed separately. This setup item allows you to determine the timing of the transition from RAS (row address strobe) to CAS (column address strobe). The less the clock cycles, the faster the DRAM performance. Setting options: [2T] to [5T]. MA 1T/2T Select This setting controls the SDRAM command rate. Selecting Auto allows SDRAM signal controller to run at [1T] (T=clock cycles) rate. Selecting [MA 1T] makes SDRAM signal controller run at [2T] rate. [1T] is faster than [2T]. Setting options: [Auto], [2T], [1T]. 3-12

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3-12
MS-7060 Micro ATX Mainboard
DRAM Timing Control
This field allows you to select the DRAM timing setting. Setting to [By SPD] enables
Max Memclock (Mhz) automatically to be determined by SPD.
Selecting [Manual]
allows users to configure these fields manually.
DRAM CAS Latency
When the
DRAM Timing Control
is set to [Manual], this field is adjustable. The
field controls the CAS latency, which determines the timing delay before SDRAM
starts a read command after receiving it.
Setting options:
[2T], [2.5T], [3T]. [2T]
increases system performance while [3T] provides more stable system
performance.
RAS Active Time (tRAS)
When the
DRAM Timing Control
is set to [Manual], this field is adjustable. This
setting determines the time RAS takes to read from and write to a memory cell.
Setting options: [4T]
to
[9T].
RAS Precharge Time (tRP)
When the
DRAM Timing Control
is set to [Manual], this field is adjustable. This
setting controls the number of cycles for Row Address Strobe (RAS) to be
allowed to precharge. If insufficient time is allowed for the RAS to accumulate its
charge before DRAM refresh, refreshing may be incomplete and DRAM may fail
to retain data. This item applies only when synchronous DRAM is installed in the
system. Setting options: [2T]
to [5T].
RAS to CAS Delay (tRCD)
When the
DRAM Timing Control
is set to [Manual], this field is adjustable.
When DRAM is refreshed, both rows and columns are addressed separately.
This setup item allows you to determine the timing of the transition from RAS (row
address strobe) to CAS (column address strobe).
The less the clock cycles, the
faster the DRAM performance. Setting options: [2T]
to [5T].
MA 1T/2T Select
This setting controls the SDRAM command rate. Selecting Auto allows SDRAM
signal controller to run at [1T] (T=clock cycles) rate.
Selecting [MA 1T] makes
SDRAM signal controller run at [2T] rate.
[1T] is faster than [2T].
Setting options:
[Auto], [2T], [1T].