MSI PH61A User Guide - Page 49

Adjusted DRAM Frequency

Page 49 highlights

Chapter 3 MS-7732 ▶ OC Genie Button Operation This field is used to enable/ disable OC Genie function. ▶ DRAM Frequency This setting controls the memory frequency to enable the memory to run at different frequency combinations. ▶ Adjusted DRAM Frequency It shows the adjusted DRAM frequency. Read-only. ▶ DRAM Timing Mode Select whether DRAM timing is controlled by the SPD (Serial Presence Detect) EEPROM on the DRAM module. Setting to [Auto] enables DRAM timings and the following "Advanced DRAM Configuration" sub-menu to be determined by BIOS based on the configurations on the SPD. Selecting [Link] or [Unlink] allows users to configure the DRAM timings and the following related "Advanced DRAM Configuration" sub-menu manually. ▶ Advanced DRAM Configuration Press to enter the sub-menu. ▶ Command Rate This setting controls the DRAM command rate. ▶ tCL This controls the CAS latency, which determines the timing delay (in clock cycles) before SDRAM starts a read command after receiving it. ▶ tRCD When DRAM is refreshed, both rows and columns are addressed separately. This setup item allows you to determine the timing of the transition from RAS (row address strobe) to CAS (column address strobe). The less the clock cycles, the faster the DRAM performance. ▶ tRP This setting controls the number of cycles for Row Address Strobe (RAS) to be allowed to precharge. If insufficient time is allowed for the RAS to accumulate its charge before DRAM refresh, refreshing may be incomplete and DRAM may fail to retain data. This item applies only when synchronous DRAM is installed in the system. 3-13

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3-13
MS-7732
Chapter 3
OC Gen±e Button Operat±on
Th±s field ±s used to enable/ d±sable OC Gen±e funct±on.
DRAM Frequency
Th±s sett±ng controls the memory frequency to enable the memory to run at d±fferent
frequency comb±nat±ons.
Adjusted DRAM Frequency
It shows the adjusted DRAM frequency. Read-only.
DRAM T±m±ng Mode
Select whether DRAM t±m±ng ±s controlled by the SPD (Ser±al Presence Detect) EE-
PROM on the DRAM module. Sett±ng to [Auto] enables DRAM t±m±ngs and the follow±ng
“Advanced DRAM Configurat±on” sub-menu to be determ±ned by BIOS based on the
configurat±ons on the SPD. Select±ng [L±nk] or [Unl±nk] allows users to configure the
DRAM t±m±ngs and the follow±ng related “Advanced DRAM Configurat±on” sub-menu
manually.
Advanced DRAM Configurat±on
Press <Enter> to enter the sub-menu.
Command Rate
Th±s sett±ng controls the DRAM command rate.
tCL
Th±s controls the CAS latency, wh±ch determ±nes the t±m±ng delay (±n clock cycles)
before SDRAM starts a read command after rece±v±ng ±t.
tRCD
When DRAM ±s refreshed, both rows and columns are addressed separately. Th±s
setup ±tem allows you to determ±ne the t±m±ng of the trans±t±on from RAS (row ad-
dress strobe) to CAS (column address strobe). The less the clock cycles, the faster
the DRAM performance.
tRP
Th±s sett±ng controls the number of cycles for Row Address Strobe (RAS) to be
allowed to precharge. If ±nsuffic±ent t±me ±s allowed for the RAS to accumulate ±ts
charge before DRAM refresh, refresh±ng may be ±ncomplete and DRAM may fa±l
to reta±n data. Th±s ±tem appl±es only when synchronous DRAM ±s ±nstalled ±n the
system.