Sennheiser EW 100 G4-845 Product Specification ew 100 G4-835-S/845-S/865-S - Page 2
ew 100 G4-835-S | ew 100 G4-845-S, ew 100 G4-865-S | Vocal Set - 835 s a
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PRODUCT SPECIFICATION 2/7 evolution wireless G4 ew 100 G4-835-S | ew 100 G4-845-S | ew 100 G4-865-S | Vocal Set SPECIFICATIONS EM 100 G4 RF characteristics Modulation Frequency ranges Receiving frequencies Wideband FM A1: 470 - 516 MHz A: 516 - 558 MHz AS: 520 - 558 MHz G: 566 - 608 MHz GB: 606 - 648 MHz B: 626 - 668 MHz C: 734 - 776 MHz D: 780 - 822 MHz E: 823 - 865 MHz JB: 806 - 810 MHz K+: 925 - 937.5 MHz 1G8: 1785 - 1800 MHz Max. 1680 receiving frequencies, adjustable in 25 kHz steps 20 frequency banks, each with up to 12 factory-preset channels, no intermodulation Switching bandwidth Nominal/peak deviation Receiver principle Sensitivity (with HDX, peak deviation) Adjacent channel selection Intermodulation attenuation Blocking 1 frequency bank with up to 12 programmable channels up to 42 MHz ±24 kHz / ±48 kHz True diversity < 2.5 μV for 52 dBA eff S/N Typically ≥ 65 dB Typically ≥ 65 dB ≥ 70 dB Squelch Pilot tone squelch Antenna inputs low: 5 dBµV middle: 15 dBµV high: 25 dBμV Can be switched off 2 BNC sockets AF characteristics Compander system EQ presets (switchable, act on line and monitor outputs) Signal-to-noise ratio (1 mV, peak deviation) Total harmonic distortion (THD) AF output voltage (at peak deviation, 1 kHz AF) Setting range "AF Out" Sennheiser HDX Preset 1: Flat Preset 2: Low Cut (-3 dB at 180 Hz) Preset 3: Low Cut/High Boost (-3 dB at 180 Hz, +6 dB at 10 kHz) Preset 4: High Boost (+6 dB at 10 kHz) ≥ 110 dBA ≤ 0.9 % 6.3 mm jack socket (unbalanced): +12 dBu XLR socket (balanced): +18 dBu 48 dB (3 dB steps) Overall device Temperature range Power supply Current consumption Dimensions Weight -10 °C to +55 °C 12 V DC 300 mA Approx. 190 x 212 x 43 mm Approx. 980 g CONNECTIONS DC IN 12V/300mA AF OUT BAL/UNBAL DATA DATA ANT II RF IN DC IN 12V/300mA ANT I RF IN