ASRock X99 Extreme4/3.1 User Manual - Page 70

DRAM Frequency OC Preset

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DRAM Voltage Use this to conigure DRAM Voltage. he default value is [Auto]. DRAM Reference Clock Select Auto for optimized settings. DRAM Frequency If [Auto] is selected, the motherboard will detect the memory module(s) inserted and assign the appropriate frequency automatically. DRAM Frequency OC Preset If the DRAM frequency is selected, the corresponding DRAM and BCLK frequency for overclocking will be set. Primary Timing CAS# Latency (tCL) he time between sending a column address to the memory and the beginning of the data in response. RAS# to CAS# Delay (tRCD) he number of clock cycles required between the opening of a row of memory and accessing columns within it. Row Precharge Time (tRP) he number of clock cycles required between the issuing of the precharge command and opening the next row. RAS# Active Time (tRAS) he number of clock cycles required between a bank active command and issuing the precharge command. Command Rate (CR) he delay between when a memory chip is selected and when the irst active command can be issued. Secondary Timing Write Recovery Time (tWR) he amount of delay that must elapse ater the completion of a valid write operation, before an active bank can be precharged. 64 English

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64
English
DRAM Voltage
Use this to con±gure DRAM Voltage. He default value is [Auto].
DRAM Reference Clock
Select Auto for optimized settings.
DRAM Frequency
If [Auto] is selected, the motherboard will detect the memory module(s) inserted
and assign the appropriate frequency automatically.
DRAM Frequency OC Preset
If the DRAM frequency is selected, the corresponding DRAM and BCLK frequency for
overclocking will be set.
Primary Timing
CAS# Latency (tCL)
He time between sending a column address to the memory and the beginning of the data
in response.
RAS# to CAS# Delay (tRCD)
He number of clock cycles required between the opening of a row of memory and
accessing columns within it.
Row Precharge Time (tRP)
He number of clock cycles required between the issuing of the precharge command
and opening the next row.
RAS# Active Time (tRAS)
He number of clock cycles required between a bank active command and issuing the
precharge command.
Command Rate (CR)
He delay between when a memory chip is selected and when the ±rst active command can
be issued.
Secondary Timing
Write Recovery Time (tWR)
He amount of delay that must elapse a³er the completion of a valid write operation,
before an active bank can be precharged.