HP ProLiant DL288 ISS Technology Update, Volume 7, Number 7 - Page 5

Spotlight: HP Microsoft Solutions Lab benefits customers, partners, and resellers

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ISS Technology Update Volume 7, Number 7 As DRAM storage density increases and operating voltage decreases, the frequency of cosmic-particle-induced soft errors may increase. DRAM manufacturers are trying to lessen the likelihood of cosmic particle collisions by changing the memory cell geometry.1 No current efforts have successfully eliminated cosmic-particle-induced soft errors; however, a method has been invented to detect them. In December 2007, Intel was granted U.S. patent 7166847, System with response to cosmic ray detection, for a device that can detect cosmic particle events in integrated circuit chips. If an event is detected, its location could be used to reload the correct data in nearby memory cells. Spotlight: HP Microsoft Solutions Lab benefits customers, partners, and resellers Focus on Microsoft solutions for HP servers HP has various on-site labs for conducting research and development (R&D). This article highlights the Microsoft Solutions Lab, which is responsible for characterizing, sizing, and testing Microsoft applications on HP Proliant servers, as well as on StorageWorks and Integrity servers. The ten solutions engineers who comprise the Microsoft Internet Business Solutions group at HP (a part of the HP ESS Software division) focus their efforts on developing best practices for deployment and capacity planning purposes. Review and test solutions Essentially an R&D team, the lab members routinely review and test Microsoft-related solutions before they are applied in the field. The solutions involve Windows network architectures and recommended configurations as well as application integration. As needed, Microsoft technicians are brought into the lab to incorporate their expertise on specific projects. Figure 2-1. Views of the HP Microsoft Solutions Lab. 1 Ziegler, J. F., Nelson, M. E., Shell, J. D., et al. "Cosmic Ray Soft Error Rates of 16-Mb DRAM Memory Chips." IEEE Journal of Solid-State Circuits, V. 33, N. 2, pp. 246-252, February 1998. 5

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ISS Technology Update
Volume 7, Number 7
5
As DRAM storage density increases and operating voltage decreases, the frequency of cosmic-particle-induced soft errors may
increase. DRAM manufacturers are trying to lessen the likelihood of cosmic particle collisions by changing the memory cell
geometry.
1
No current efforts have successfully eliminated cosmic-particle-induced soft errors; however, a method has been
invented to detect them. In December 2007, Intel was granted U.S. patent 7166847, System with response to cosmic ray
detection, for a device that can detect cosmic particle events in integrated circuit chips. If an event is detected, its location could
be used to reload the correct data in nearby memory cells.
Spotlight: HP Microsoft Solutions Lab benefits customers, partners,
and resellers
Focus on Microsoft solutions for HP servers
HP has various on-site labs for conducting research and development (R&D). This article highlights the Microsoft Solutions Lab,
which is responsible for characterizing, sizing, and testing Microsoft applications on HP Proliant servers, as well as on
StorageWorks and Integrity servers. The ten solutions engineers who comprise the Microsoft Internet Business Solutions group at
HP (a part of the HP ESS Software division) focus their efforts on developing best practices for deployment and capacity
planning purposes.
Review and test solutions
Essentially an R&D team, the lab members routinely review and test Microsoft-related solutions before they are applied in the
field. The solutions involve Windows network architectures and recommended configurations as well as application integration.
As needed, Microsoft technicians are brought into the lab to incorporate their expertise on specific projects.
Figure 2-1.
Views of the HP Microsoft Solutions Lab.
1
Ziegler, J. F., Nelson, M. E., Shell, J. D., et al. "Cosmic Ray Soft Error Rates of 16-Mb DRAM Memory Chips." IEEE Journal of Solid-State Circuits, V. 33, N. 2, pp. 246-252,
February 1998.