MSI KT4VL User Guide - Page 65
DDR DQS Input Delay, SDRAM Burst Length, SDRAM 1T Command, Fast Command, Fast R-2-R Turnaround
UPC - 816909002867
View all MSI KT4VL manuals
Add to My Manuals
Save this manual to your list of manuals |
Page 65 highlights
BIOS Setup DDR DQS Input Delay This setting allows you to set the delay time of DQS to improve the setup time and hold time of the data, and improve the stability. Setting options: Auto, 18, 08, 0E, 0F. SDRAM Burst Length This setting allows you to set the size of Burst-Length for DRAM. Bursting feature is a technique that DRAM itself predicts the address of the next memory location to be accessed after the first address is accessed. To use the feature, you need to define the burst length, which is the actual length of burst plus the starting address and allows internal address counter to properly generate the next memory location. The bigger the size, the faster the DRAM performance. Settings: 4 QW, 8 QW. SDRAM 1T Command This setting controls the SDRAM command rate. Selecting Enabled allows SDRAM signal controller to run at 1T (T=clock cycles) rate. Selecting Disabled makes SDRAM signal controller run at 2T rate. 1T is faster than 2T. Setting options: Disabled, Enabled. Fast Command This item controls the internal timing of CPU. Selecting Ultra allows CPU to handle data/instructions at the fastest speed. Fast enables CPU to handle at a faster speed, while Normal let CPU handle them at the slowest rate. Fast R-2-R Turnaround Burst read operation can be interrupted by new read of any bank. Random column access is allowed. READ to READ interval is minimum 1 CLK. Selecting Enabled to shorten the turnaround interval to improve the performance. Setting options: Disabled, Enabled. AGP Timing Control Press and the following sub-menu appears. 3-15