ASRock B560M Steel Legend User Manual - Page 66

RAS to RAS Delay tRRD_S

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B560M Steel Legend The amount of delay that must elapse after the completion of a valid write operation, before an active bank can be precharged. Refresh Cycle Time (tRFC) The number of clocks from a Refresh command until the first Activate command to the same rank. RAS to RAS Delay (tRRD_L) The number of clocks between two rows activated in different banks of the same rank. RAS to RAS Delay (tRRD_S) The number of clocks between two rows activated in different banks of the same rank. Write to Read Delay (tWTR_L) The number of clocks between the last valid write operation and the next read command to the same internal bank. Write to Read Delay (tWTR_S) The number of clocks between the last valid write operation and the next read command to the same internal bank. Read to Precharge (tRTP) The number of clocks that are inserted between a read command to a row precharge command to the same rank. Four Activate Window (tFAW) The time window in which four activates are allowed the same rank. CAS Write Latency (tCWL) Configure CAS Write Latency. Third Timing tREFI Configure refresh cycles at an average periodic interval. tCKE Configure the period of time the DDR4 initiates a minimum of one refresh command internally once it enters Self-Refresh mode. 59 English

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English
59
B560M Steel Legend
°e amount of delay that must elapse aſter the completion of a valid write operation,
before an active bank can be precharged.
Refresh Cycle Time (tRFC)
°e number of clocks from a Refresh command until the first Activate command to
the same rank.
RAS to RAS Delay (tRRD_L)
°e number of clocks between two rows activated in different banks of the same
rank.
RAS to RAS Delay (tRRD_S)
°e number of clocks between two rows activated in different banks of the same
rank.
Write to Read Delay (tWTR_L)
°e number of clocks between the last valid write operation and the next read command to
the same internal bank.
Write to Read Delay (tWTR_S)
°e number of clocks between the last valid write operation and the next read command to
the same internal bank.
Read to Precharge (tRTP)
°e number of clocks that are inserted between a read command to a row pre-
charge command to the same rank.
Four Activate Window (tFAW)
°e time window in which four activates are allowed the same rank.
CAS Write Latency (tCWL)
Configure CAS Write Latency.
Third Timing
tREFI
Configure refresh cycles at an average periodic interval.
tCKE
Configure the period of time the DDR4 initiates a minimum of one refresh
command internally once it enters Self-Refresh mode.