ASRock H610M-HDVP/D5 User Manual - Page 53

DRAM Timing Configuration

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B660M-HDVP/D5 H610M-HDVP/D5 Configure the current limit of the GT slice. A lower limit can protect the CPU and save power, while a higher limit may improve performance. DRAM Configuration Memory Information Allows users to browse the serial presence detect (SPD) and Intel extreme memory profile (XMP) for DDR5 modules. DRAM Timing Configuration Load XMP Setting Load XMP settings to overclock the memory and perform beyond standard specifications. DRAM Reference Clock Select Auto for optimized settings. DRAM Frequency If [Auto] is selected, the motherboard will detect the memory module(s) inserted and assign the appropriate frequency automatically. DRAM Gear Mode High gear is good for high frequency. Primary Timing CAS# Latency (tCL) The time between sending a column address to the memory and the beginning of the data in response. RAS# to CAS# Delay (tRCD) The number of clock cycles required between the opening of a row of memory and accessing columns within it. Row Precharge (tRP) The number of clock cycles required between the issuing of the precharge command and opening the next row. RAS# Active Time (tRAS) 47 English

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47
English
B660M-HDVP/D5
H610M-HDVP/D5
Configure the current limit of the GT slice. A lower limit can protect the CPU and
save power, while a higher limit may improve performance.
DRAM Configuration
Memory Information
Allows users to browse the serial presence detect (SPD) and Intel extreme memory profile
(XMP) for DDR5 modules.
DRAM Timing Configuration
Load XMP Setting
Load XMP settings to overclock the memory and perform beyond standard
specifications.
DRAM Reference Clock
Select Auto for optimized settings.
DRAM Frequency
If [Auto] is selected, the motherboard will detect the memory module(s) inserted
and assign the appropriate frequency automatically.
DRAM Gear Mode
High gear is good for high frequency.
Primary Timing
CAS# Latency (tCL)
°e time between sending a column address to the memory and the beginning of the data
in response.
RAS# to CAS# Delay (tRCD)
°e number of clock cycles required between the opening of a row of memory and
accessing columns within it.
Row Precharge (tRP)
°e number of clock cycles required between the issuing of the precharge command and
opening the next row.
RAS# Active Time (tRAS)