EVGA 780i User Manual - Page 91

Row Address Strobe, Write Recovery Time, W to R Termination Turnaround

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780i 3-Way SLI Motherboard EVGA 80 ‰ Row Address Strobe Adjusts the minimum RAS active time. This is the amount of time between a row being activated by Precharge and deactivated. A row cannot be deactivated until tRAS has completed. The lower this value, the faster the performance. However, if it is set too low it can cause data corruption by deactivating the row to soon. Adjustable from 1 to 63. ‰ Write Recovery Time Memory timing that determines the delay between a write command and a Precharge command is set to the same bank of memory. Adjustable from 1 to 15. ‰ W to R Termination Turnaround The Write-to-Read time is the number of clock cycles between the last write

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780i 3-Way SLI Motherboard
EVGA
80
Row Address Strobe
Adjusts the minimum RAS active time. This is the amount of time between a
row being activated by Precharge and deactivated. A row cannot be
deactivated until tRAS has completed. The lower this value, the faster the
performance. However, if it is set too low it can cause data corruption by
deactivating the row to soon. Adjustable from 1 to 63.
Write Recovery Time
Memory timing that determines the delay between a write command and a
Precharge command is set to the same bank of memory. Adjustable from 1 to
15.
W to R Termination Turnaround
The Write-to-Read time is the number of clock cycles between the last write