Gigabyte GA-770T-USB3 Manual - Page 39

Trfc3 for DIMM4 Options are: Auto (default), 90ns, 110ns, 160ns, 300ns, 350ns. Write Recovery Time Options are: Auto (default), 5T~8T, 10T, 12T. Precharge Time Options are: Auto (default), 4T~7T. Row Cycle Time Options are: Auto (default), 11T~42T. RAS to RAS Delay Options are: Auto (default), 4T~7T. Bank Interleaving Enables or disables memory bank interleaving. Enabled allows the system to simultaneously access different banks of the memory to increase memory performance and stability. (Default: Enabled) Channel interleave Enables or disables memory channel interleaving. Enabled allows the system to simultaneously access different channels of the memory to increase memory performance and stability. (Default: Enabled) ******** System Voltage Optimized ******** System Voltage Control Determines whether to manually set the system voltages. Auto lets the BIOS automatically set the system voltages as required. Manual allows all voltage control items below to be configurable. (Default: Auto) DRAM Voltage Control Allows you to set the memory voltage. Normal Supplies the memory voltage as required. (Default) 1.500V ~ 2.380V The adjustable range is from 1.500V to 2.380V. Note: Increasing memory voltage may result in damage to the memory or reduce the useful life of the memory. DDR VTT Voltage Control Normal Supplies the memory VTT voltage as required. (Default) 0.900V ~ 1.300V The adjustable range is from 0.900V to 1.300V. Note: Increasing memory voltage may result in damage to the memory or reduce the useful life of the memory NB Voltage Control Allows you to set the North Bridge voltage. Normal Supplies the North Bridge voltage as required. (Default) 1.100V ~ 1.800V The adjustable range is from 1.100V to 1.800V. SB/HT Voltage Control Allows you to set the South Bridge/HT-Link voltage. Normal Supplies the South Bridge/HT-Link voltage as required. (Default) 1.200V ~ 1.580V The adjustable range is from 1.200V to 1.580V. - 39 - BIOS Setup