MSI Z77A User Guide - Page 55

Adjusted GT Frequency

Page 55 highlights

Chapter 2 MS-7752 ▶ tRP Controls number of cycles for RAS (row address strobe) to be allowed to pre-charge. If insufficient time is allowed for RAS to accumulate before DRAM refresh, the DRAM may fail to retain data. This item applies only when synchronous DRAM is installed in the system. ▶ tRAS Determines the time RAS (row address strobe) takes to read from and write to memory cell. ▶ tRFC This setting determines the time RFC takes to read from and write to a memory cell. ▶ tWR Determines minimum time interval between end of write data burst and the start of a pre-charge command. Allows sense amplifiers to restore data to cell. ▶ tWTR Determines minimum time interval between the end of write data burst and the start of a column-read command; allows I/O gating to overdrive sense amplifies before read command starts. ▶ tRRD Specifies the active-to-active delay of different banks. ▶ tRTP Time interval between a read and a precharge command. ▶ tFAW This item is used to set the tFAW (four activate window delay) timing. ▶ tWCL This item is used to set the tWCL (Write CAS Latency) timing. ▶ tCKE This item is used to set the Pulse Width for DRAM module. ▶ tRTL This item is used to set Round Trip Latency settings. ▶ Advanced Channel 1/ 2 Timing Configuration Press to enter the sub-menu. And you can set the advanced memory timing for each channel. ▶ GT OverClocking This item allows you to enable/ disable the overclocking of integrated graphics. ▶ GT Ratio This setting controls the ratio of integrated graphics frequency to enable the integrated graphics to run at different frequency combinations. ▶ Adjusted GT Frequency It shows the iGPU frequency. Read-only. 2-13

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2-13
MS-7752
Chapter 2
tRP
Controls number of cycles for RAS (row address strobe) to be allowed to pre-charge.
If ±nsuffic±ent t±me ±s allowed for RAS to accumulate before DRAM refresh, the DRAM
may fa±l to reta±n data. Th±s ±tem appl±es only when synchronous DRAM ±s ±nstalled
±n the system.
tRAS
Determ±nes the t±me RAS (row address strobe) takes to read from and wr±te to mem-
ory cell.
tRFC
Th±s sett±ng determ±nes the t±me RFC takes to read from and wr±te to a memory
cell.
tWR
Determ±nes m±n±mum t±me ±nterval between end of wr±te data burst and the start of a
pre-charge command. Allows sense ampl±fiers to restore data to cell.
tWTR
Determ±nes m±n±mum t±me ±nterval between the end of wr±te data burst and the start
of a column-read command; allows I/O gat±ng to overdr±ve sense ampl±fies before
read command starts.
tRRD
Spec±fies the act±ve-to-act±ve delay of d±fferent banks.
tRTP
T±me ±nterval between a read and a precharge command.
tFAW
Th±s ±tem ±s used to set the tFAW (four act±vate w±ndow delay) t±m±ng.
tWCL
Th±s ±tem ±s used to set the tWCL (Wr±te CAS Latency) t±m±ng.
tCKE
Th±s ±tem ±s used to set the Pulse W±dth for DRAM module.
tRTL
Th±s ±tem ±s used to set Round Tr±p Latency sett±ngs.
Advanced Channel 1/ 2 T±m±ng Configurat±on
Press <Enter> to enter the sub-menu. And you can set the advanced memory t±m±ng
for each channel.
GT OverClock±ng
Th±s ±tem allows you to enable/ d±sable the overclock±ng of ±ntegrated graph±cs.
GT Rat±o
Th±s sett±ng controls the rat±o of ±ntegrated graph±cs frequency to enable the ±ntegrated
graph±cs to run at d±fferent frequency comb±nat±ons.
Adjusted GT Frequency
It shows the ±GPU frequency. Read-only.