ASRock Z87 Extreme6/ac User Manual - Page 88

Write to Read Delay tWTR, RAS to RAS Delay tRRD

Get ASRock Z87 Extreme6/ac PDF manuals and user guides View all ASRock Z87 Extreme6/ac manuals
Add to My Manuals
Save this manual to your list of manuals

Page 88 highlights

Command Rate (CR) The delay between when a memory chip is selected and when the first active command can be issued. Write Recovery Time (tWR) The amount of delay that must elapse after the completion of a valid write operation, before an active bank can be precharged. Refresh Cycle Time (tRFC) The number of clocks from a Refresh command until the first Activate command to the same rank. RAS to RAS Delay (tRRD) The number of clocks between two rows activated in different banks of the same rank. Write to Read Delay (tWTR) The number of clocks between the last valid write operation and the next read command to the same internal bank. Read to Precharge (tRTP) The number of clocks that are inserted between a read command to a row precharge command to the same rank. Four Activate Window (tFAW) The time window in which four activates are allowed the same rank. CAS Write Latency (tCWL) Configure CAS Write Latency. tREFI Configure refresh cycles at an average periodic interval. tCKE Configure the period of time the DDR3 initiates a minimum of one refresh command internally once it enters Self-Refresh mode. tRDRD Configure between module read to read delay. 82 English

  • 1
  • 2
  • 3
  • 4
  • 5
  • 6
  • 7
  • 8
  • 9
  • 10
  • 11
  • 12
  • 13
  • 14
  • 15
  • 16
  • 17
  • 18
  • 19
  • 20
  • 21
  • 22
  • 23
  • 24
  • 25
  • 26
  • 27
  • 28
  • 29
  • 30
  • 31
  • 32
  • 33
  • 34
  • 35
  • 36
  • 37
  • 38
  • 39
  • 40
  • 41
  • 42
  • 43
  • 44
  • 45
  • 46
  • 47
  • 48
  • 49
  • 50
  • 51
  • 52
  • 53
  • 54
  • 55
  • 56
  • 57
  • 58
  • 59
  • 60
  • 61
  • 62
  • 63
  • 64
  • 65
  • 66
  • 67
  • 68
  • 69
  • 70
  • 71
  • 72
  • 73
  • 74
  • 75
  • 76
  • 77
  • 78
  • 79
  • 80
  • 81
  • 82
  • 83
  • 84
  • 85
  • 86
  • 87
  • 88
  • 89
  • 90
  • 91
  • 92
  • 93
  • 94
  • 95
  • 96
  • 97
  • 98
  • 99
  • 100
  • 101
  • 102
  • 103
  • 104
  • 105
  • 106
  • 107
  • 108
  • 109
  • 110
  • 111
  • 112
  • 113
  • 114
  • 115
82
English
Command Rate (CR)
°e delay between when a memory chip is selected and when the first active command can
be issued.
Write Recovery Time (tWR)
°e amount of delay that must elapse aſter the completion of a valid write operation,
before an active bank can be precharged.
Refresh Cycle Time (tRFC)
°e number of clocks from a Refresh command until the first Activate command to
the same rank.
RAS to RAS Delay (tRRD)
°e number of clocks between two rows activated in different banks of the same
rank.
Write to Read Delay (tWTR)
°e number of clocks between the last valid write operation and the next read
command to the same internal bank.
Read to Precharge (tRTP)
°e number of clocks that are inserted between a read command to a row pre-
charge command to the same rank.
Four Activate Window (tFAW)
°e time window in which four activates are allowed the same rank.
CAS Write Latency (tCWL)
Configure CAS Write Latency.
tREFI
Configure refresh cycles at an average periodic interval.
tCKE
Configure the period of time the DDR3 initiates a minimum of one refresh
command internally once it enters Self-Refresh mode.
tRDRD
Configure between module read to read delay.