Dell PowerEdge M915 Technical Guide - Page 28

Sparing, Mirroring, Memory Scrubbing

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Dell   Quad-rank DIMM types can support speeds up to 1333MT/s. If DIMMs of different speeds are mixed, all channels will operate at the fastest common frequency. 7.6 Sparing Memory sparing (spare bank) is supported in certain configurations with 32 memory modules installed. If online sparing is enabled, identical DIMMs must be installed in the same slots across each channel. The memory sparing feature must be enabled in the Memory Information screen in the System Setup programs. To use memory sparing, node interleaving must be disabled. For more information on memory sparing, see the Dell PowerEdge Modular Systems Hardware Owner's Manual on Support.Dell.com. 7.7 Mirroring Memory mirroring is not supported. 7.8 Memory Scrubbing The M915 memory interface supports memory scrubbing (sequential or redirection) and patrol scrubbing, single-bit correction, and multi-bit error detection. The failure of an x4 DRAM device results in errors to one ECC symbol and can be corrected (chipkill). The failure of an x8 DRAM device results in errors to two ECC symbols, and can be detected but cannot be corrected. PowerEdge M915 Technical Guide 28

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Dell
PowerEdge M915 Technical Guide
28
Quad-rank DIMM types can support speeds up to 1333MT/s.
If DIMMs of different speeds are mixed, all channels will operate at the fastest common
frequency.
7.6
Sparing
Memory sparing (spare bank) is supported in certain configurations with 32 memory modules installed.
If online sparing is enabled, identical DIMMs must be installed in the same slots across each channel.
The memory sparing feature must be enabled in the Memory Information screen in the System Setup
programs. To use memory sparing, node interleaving must be disabled.
For more information on memory sparing, see the
Dell PowerEdge Modular Systems Hardware
Owner’s Manual
on
Support.Dell.com
.
7.7
Mirroring
Memory mirroring is not supported.
7.8
Memory Scrubbing
The M915 memory interface supports memory scrubbing (sequential or redirection) and patrol
scrubbing, single-bit correction, and multi-bit error detection. The failure of an x4 DRAM device
results in errors to one ECC symbol and can be corrected (chipkill). The failure of an x8 DRAM device
results in errors to two ECC symbols, and can be detected but cannot be corrected.