Seagate ST400FX0002 Pulsar XT.2 SAS Product Manual - Page 22

Reliability specifications

Page 22 highlights

6.0 Reliability specifications The following reliability specifications assume correct host and drive operational interface, including all interface timings, power supply voltages, environmental requirements and drive mounting constraints. Read Error Rates 1 Unrecovered Data Less than 1 LBA in 1016 bits transferred Miscorrected Data Less than 1 LBA in 1021 bits transferred Interface error rate: Less than 1 error in 1012 bits transferred Mean Time Between Failure (MTBF): 2,000,000 hours Annualized Failure Rate (AFR): 0.44% Preventive maintenance: None required Typical Data Retention with Power removed (at 40C) 2 Endurance Rating: 3 3 months Method 1: Full drive writes per day 35 Method 2: TBW (per JEDEC JESD218 400GB = 24,800 TB 200GB = 12,400 TB 100GB = 6,200 TB 1. Error rate specified with automatic retries and data correction with ECC enabled and all flaws reallocated. 2. As NAND Flash devices age with use, the capability of the media to retain a programmed value begins to deteriorate. This deterioration is affected by the number of times a particular memory cell is programmed and subsequently erased. When a device is new, it has a powered off data retention capability of up to several years. With use the retention capability of the device is reduced. Temperature also has an effect on how long a Flash component can retain its programmed value with power removed. At high temperature the retention capabilities of the device are reduced. Data retention is not an issue with power applied to the SSD. The SSD drive contains firmware and hardware features that can monitor and refresh memory cells when power is applied. 3. Endurance rating is the expected amount of host data that can be written by product when subjected to a specified workload at a specified operating and storage temperature. For the specific workload to achieve this level of endurance, please reference JEDEC Specification JESD218. TBW is defined as 1x10^12 Bytes. 6.1 Error rates The error rates stated in this manual assume the following: • The drive is operated in accordance with this manual using DC power as defined in paragraph 7.3, "DC power requirements." • Errors caused by host system failures are excluded from error rate computations. • Assume random data. • Default OEM error recovery settings are applied. This includes AWRE, ARRE, full read retries, full write retries and full retry time. 14 Pulsar XT.2 SAS Product Manual, Rev. B

  • 1
  • 2
  • 3
  • 4
  • 5
  • 6
  • 7
  • 8
  • 9
  • 10
  • 11
  • 12
  • 13
  • 14
  • 15
  • 16
  • 17
  • 18
  • 19
  • 20
  • 21
  • 22
  • 23
  • 24
  • 25
  • 26
  • 27
  • 28
  • 29
  • 30
  • 31
  • 32
  • 33
  • 34
  • 35
  • 36
  • 37
  • 38
  • 39
  • 40
  • 41
  • 42
  • 43
  • 44
  • 45
  • 46
  • 47
  • 48
  • 49
  • 50
  • 51
  • 52
  • 53
  • 54
  • 55
  • 56
  • 57
  • 58
  • 59
  • 60
  • 61
  • 62
  • 63
  • 64
  • 65
  • 66
  • 67
  • 68
  • 69
  • 70
  • 71
  • 72
  • 73
  • 74

14
Pulsar XT.2 SAS Product Manual, Rev. B
6.0
Reliability specifications
The following reliability specifications assume correct host and drive operational interface, including all inter-
face timings, power supply voltages, environmental requirements and drive mounting constraints.
6.1
Error rates
The error rates stated in this manual assume the following:
• The drive is operated in accordance with this manual using DC power as defined in paragraph 7.3, "DC
power requirements."
Errors caused by host system failures are excluded from error rate computations.
Assume random data.
• Default OEM error recovery settings are applied. This includes AWRE, ARRE, full read retries, full write
retries and full retry time.
Read Error Rates
1
1.
Error rate specified with automatic retries and data correction with ECC enabled and all flaws reallocated.
2.
As NAND Flash devices age with use, the capability of the media to retain a programmed value begins to deteriorate.
This deterioration is affected by the number of times a particular memory cell is programmed and subsequently erased.
When a device is new, it has a powered off data retention capability of up to several years. With use the retention ca-
pability of the device is reduced. Temperature also has an effect on how long a Flash component can retain its pro-
grammed value with power removed. At high temperature the retention capabilities of the device are reduced. Data
retention is not an issue with power applied to the SSD. The SSD drive contains firmware and hardware features that
can monitor and refresh memory cells when power is applied.
3.
Endurance rating is the expected amount of host data that can be written by product when subjected to a specified work-
load at a specified operating and storage temperature. For the specific workload to achieve this level of endurance,
please reference JEDEC Specification JESD218. TBW is defined as 1x10^12 Bytes.
Unrecovered Data
Less than 1 LBA in 10
16
bits transferred
Miscorrected Data
Less than 1 LBA in 10
21
bits transferred
Interface error rate:
Less than 1 error in 10
12
bits transferred
Mean Time Between Failure (MTBF):
2,000,000 hours
Annualized Failure Rate (AFR):
0.44%
Preventive maintenance:
None required
Typical Data Retention with
Power removed (at 40C)
2
3 months
Endurance Rating:
3
Method 1: Full drive writes per day
35
Method 2: TBW (per JEDEC JESD218
400GB = 24,800 TB
200GB = 12,400 TB
100GB = 6,200 TB