ASRock H110 Pro BTC User Manual - Page 46

DRAM Timing Configuration, Short Duration Power Limit

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H110 Pro BTC+ Long Duration Maintained Configure the period of time until the CPU ratio is lowered when the Long Duration Power Limit is exceeded. Short Duration Power Limit Configure Package Power Limit 2 in watts. When the limit is exceeded, the CPU ratio will be lowered immediately. A lower limit can protect the CPU and save power, while a higher limit may improve performance. DRAM Timing Configuration Load XMP Setting Load XMP settings to overclock the memory and perform beyond standard specifications. DRAM Reference Clock Select Auto for optimized settings. DRAM Frequency If [Auto] is selected, the motherboard will detect the memory module(s) inserted and assign the appropriate frequency automatically. Primary Timing CAS# Latency (tCL) The time between sending a column address to the memory and the beginning of the data in response. RAS# to CAS# Delay and Row Precharge (tRCDtRP) RAS# to CAS# Delay : The number of clock cycles required between the opening of a row of memory and accessing columns within it. Row Precharge: The number of clock cycles required between the issuing of the precharge command and opening the next row. RAS# Active Time (tRAS) The number of clock cycles required between a bank active command and issuing the precharge command. Command Rate (CR) The delay between when a memory chip is selected and when the first active command can be issued. 41 English

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41
English
H110 Pro BTC+
Long Duration Maintained
Configure the period of time until the CPU ratio is lowered when the Long
Duration Power Limit is exceeded.
Short Duration Power Limit
Configure Package Power Limit 2 in watts. When the limit is exceeded, the CPU
ratio will be lowered immediately. A lower limit can protect the CPU and save
power, while a higher limit may improve performance.
DRAM Timing Configuration
Load XMP Setting
Load XMP settings to overclock the memory and perform beyond standard specifications.
DRAM Reference Clock
Select Auto for optimized settings.
DRAM Frequency
If [Auto] is selected, the motherboard will detect the memory module(s) inserted
and assign the appropriate frequency automatically.
Primary Timing
CAS# Latency (tCL)
°e time between sending a column address to the memory and the beginning of the data
in response.
RAS# to CAS# Delay and Row Precharge (tRCDtRP)
RAS# to CAS# Delay : °e number of clock cycles required between the opening of
a row of memory and accessing columns within it.
Row Precharge: °e number of clock cycles required between the issuing of the
precharge command and opening the next row.
RAS# Active Time (tRAS)
°e number of clock cycles required between a bank active command and issuing the
precharge command.
Command Rate (CR)
°e delay between when a memory chip is selected and when the first active command can
be issued.