Carvin MX640 Instruction Manual - Page 31

r El= 41 4. 1 R31 Al 04 MAID NWT 10µF 50V SK 0.2K 011 Mi a 0.P a OUTPUT 10K C2 120•F CS S60pF CS 16 RS 47µF 3300 63V R4 WV 100K 6800 C511 OtµF .1 3 012< AUDIO Hi •2 10 1.5K 6.2K NPUT 50y arx H1.7 P OUTPUT 'OK C52 C55 120, 560p1 C53 1511 R53 47µF Inv 3300 6000 RS4 1 /1/14 100K .15VDC R7 t 2.2074 41. . 4.7K 4700 R19 4700 115 t.8K 04 IMPSW42 02 MPSYN2 CI 30, 1500 22 144736A R20 SK 9N ',pa V. 06 CHANNEL I- MOSFET 010 POIANNEL I-0 MOSFET 100 ON C7 120pF P1 C4 SK 01 146705µF 112pF TP32C Abs 1.0K .2L174SA R10 22K OISSK RI4 IK 1117-1-ci p 03 R2IME D2 15(713 4.7K LiPSWV2 SW 2.265 118 MPSW02 1K 23 tSVDC • 114734A 011 •- /CHANNEL MOSFET 07 N CHANNEL MOSFET V. .15VDC 157 1 2.2K ASS 165 1.8K 04,4 LIPSW42 052 31G 051 IIC 252 114734A -ia-14 SOLI 'PI CHANNEL MOSFET 4,7K 161 4700 R63 4700 MPSW42 F166 3apF R70 5K sy, ASS 4 21y----1111 1500 060 P CHANNEL 140SFET 10K CS4 82pF . R541 2.2K ON • D sKI R62 6.80 g.:745A 160 4.7K C57 1K TP32CI .lr 164 68 Al? COO 1K 30, 053 I/P9N82 • DS2 055 t71. SK MPSW92 . ,2N5437.A 1300 061 N CHANNEL ila.GFET 037 SPOSFET .15VDC • r 1-3 ) I .) AI IA 10412 T 01.1 CH2 i 1042 2 V. R1011 An. 0.050 0030 SW 11 •1SVDG C112 2. 5,1 CI 10pF •15 11 8122 El Pi.' 2K SK 111 MPS 7.5K • WPC 0.22, 100K AL 0112 C113 RI 2 0.22µF 100K 360K 2 Dia. C117 R70 360K C121 10pF Rii5 11211 RELAY nfres.xxpl R112 100K 0106 205400 10K 0.22µF OK Cita 178 100K 3I[ 3 360K 6 01 1116 36aK 0110 1127 100K 0114 1124 0111 .15VDC 5600 210S 104735 1006 1006 6 _ ® 02 C115 4141,F 0105 J175 , N1r5e1r. 2.5uH .1SVDC .15 0.1µF Gill ) I 144.1 TO DERMAL SIATICH 0 I oc I cii,our 31.71/rm. (250W • 4/9) H4.2. "1.1' 1 PPI OTECT .20 VDC K51 31.7Vrrn• (22OW O 40 J FAN -4 143.i 113.2 DC YEL 0C3 ° 1EL -C LAup -C LAMP -C 0C4 4 0C13 0014 ocs 4 HI AI 001 4 0. Odic 007 L 1123 680 C122 470µFt TP3IC AbsO 0102 0.562 0105. 0101 32 1;03 2 D106 AL C103 2200, 25V C107. 4176017F 2,03 114745A C106 - 2252,00, OPT. C) C108 - 4Z/' 2104 114745A 0102 164502 ..0.102547 .20 VDG 1) v. 281700404 0, 03 TP3. DI 0711L R, D108. 0.560 C105 10,000µF I N1V T C104 10.000µF 801/ V. ( I 1® 1102 2.26 1/2V1 2102 114756A C100 I 220µF SOV 1 7 2213 •13VDC C110 -15VDC 220 C111 ; YttiVF 141-5 • 1 111 -10 LAST USED UST 05619. Ch.1 1.50 C11.2 51-100 Sys. 101.200 A 2 - 102 C 10 60 122 D 2 52 114 H - 4 JMP 2 4 5 K 1 SI - L 1 01 - p 1 01 101 0 11 61 106 OC - R 31 81 127 T - 101 Z 3 33 105 1155 INDUSTRIAL AVE. CAR VIN ESCONDIDO. CA 92029 (619) 747-1710 FAX 747-9065 500W STEREO POWER MODULE (mx842) Q ADJUST P1/P51 FOR &nV (s0.2rnV) DROP ACROSS R109/R110 RESPECTIVELY UNIT WARM, 120 VAC IJNE. BIADJUST P101 FOR 3.5 Vdc (±0.1 Vdc) AT A102 PIN 2 ADDED AS SECONDARY OPERATION. DRAWN SY: C. McEUEN PPFHCAFJ3 . 1 4. 4 DATE 15JAN90 4. A101 AND A102 ARE 4558 TYPE OP AMPS. D). : / 3. Al AND A2 ARE 1.33078 OP AMPS. 2. ALL DIODES ARE 1N4003 (EXCEPT AS NOTED). PCs 30.1000288 Na FEV: a 1. ALL CAPACITORS IN MICROFARADS (EXCEPT AS NOTED). nSt 80-05028 WV. J NOTES: UNLESS OTHERWISE SPECIFIED 143 REVISEDBY: cFm DATE: 26FEB91