Intel Pga478 Data Sheet - Page 23

Table 9., CMOS Signal Group DC Specifications, Table 8., AGTL+ Signal Group DC Specifications Sheet

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Electrical Specifications-Intel® Celeron® Processor 1.66 GHz/1.83 GHz Table 8. . Table 9. AGTL+ Signal Group DC Specifications (Sheet 2 of 2) VIH Input High Voltage GTLREF+100 VCCP VCCP+100 mV 3,6 VIL Input Low Voltage -100 0 GTLREF-100 mV 2,4 VOH RTT RON Output High Voltage Termination Resistance Buffer On Resistance VCCP - 100 45 22.3 50 25.5 VCCP 55 28.7 mV 6 Ω 7,10 W 5 ILI Input Leakage Current ± 100 µA 8 Cpad Pad Capacitance 1.8 2.3 2.75 pF 9 Notes: 1. Unless otherwise noted, all specifications in this table apply to all processor frequencies. 2. VIL is defined as the maximum voltage level at a receiving agent that is interpreted as a logical low value. 3. VIH is defined as the minimum voltage level at a receiving agent that is interpreted as a logical high value. 4. VIH and VOH may experience excursions above VCCP. However, input signal drivers must comply with the signal quality specifications. 5. This is the pull down driver resistance. Refer to processor I/O Buffer Models for I/V characteristics. Measured at 0.31*VCCP. RON (min) = 0.38*RTT, RON (typ) = 0.45*RTT, RON (max) = 0.52*RTT. 6. GTLREF should be generated from VCCP with a 1% tolerance resistor divider. The VCCP referred to in these specifications is the instantaneous VCCP. 7. RTT is the on-die termination resistance measured at VOL of the AGTL+ output driver. Measured at 0.31*VCCP. RTT is connected to VCCP on die. Refer to processor I/O buffer models for I/V characteristics. 8. Specified with on die RTT and RON are turned off. 9. Cpad includes die capacitance only. No package parasitics are included. 10. RTT for PREQ# is between 1.5kΩ and 6.0kΩ CMOS Signal Group DC Specifications Symbol Parameter Min Typ Max Unit Notes1 VCCP VIL I/O Voltage Input Low Voltage CMOS 0.997 -0.1 1.05 0 1.102 0.33 V V 2, 3 VIH Input High Voltage 0.7 1.05 1.20 V 2 VOL Output Low Voltage -0.1 0 0.11 V 2 VOH Output High Voltage 0.9 IOL Output Low Current 1.3 VCCP 1.2 V 2 4.1 mA 4 IOH Output High Current 1.3 4.1 mA 5 ILI Leakage Current ± 100 µA 6 Cpad1 Pad Capacitance 1.8 2.3 2.75 pF 7 Cpad2 Pad Capacitance for CMOS Input 0.95 1.2 1.45 pF 8 Notes: 1. Unless otherwise noted, all specifications in this table apply to all processor frequencies. 2. The VCCP referred to in these specifications refers to instantaneous VCCP. 3. Refer to the processor I/O Buffer Models for I/V characteristics. 4. Measured at 0.1*VCCP. 5. Measured at 0.9*VCCP. 6. For Vin between 0V and VCCP. Measured when the driver is tristated. 7. Cpad1 includes die capacitance only for PWRGOOD. No package parasitics are included. 8. Cpad2 includes die capacitance for all other CMOS input signals. No package parasitics are included. January 2007 Order Number: 315876-002 Intel® Celeron® Processor 1.66 GHz/1.83 GHz DS 23

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Intel
®
Celeron
®
Processor 1.66 GHz/1.83 GHz
January 2007
DS
Order Number: 315876-002
23
Electrical Specifications—Intel
®
Celeron
®
Processor 1.66 GHz/1.83 GHz
.
V
IH
Input High Voltage
GTLREF+100
V
CCP
V
CCP
+100
mV
3,6
V
IL
Input Low Voltage
-100
0
GTLREF-100
mV
2,4
V
OH
Output High Voltage
V
CCP
- 100
V
CCP
mV
6
R
TT
Termination Resistance
45
50
55
Ω
7,10
R
ON
Buffer On Resistance
22.3
25.5
28.7
W
5
I
LI
Input Leakage Current
± 100
μA
8
Cpad
Pad Capacitance
1.8
2.3
2.75
pF
9
Table 9.
CMOS Signal Group DC Specifications
Symbol
Parameter
Min
Typ
Max
Unit
Notes
1
V
CCP
I/O Voltage
0.997
1.05
1.102
V
V
IL
Input Low Voltage
CMOS
-0.1
0
0.33
V
2, 3
V
IH
Input High Voltage
0.7
1.05
1.20
V
2
V
OL
Output Low Voltage
-0.1
0
0.11
V
2
V
OH
Output High Voltage
0.9
V
CCP
1.2
V
2
I
OL
Output Low Current
1.3
4.1
mA
4
I
OH
Output High Current
1.3
4.1
mA
5
I
LI
Leakage Current
± 100
μA
6
Cpad1
Pad Capacitance
1.8
2.3
2.75
pF
7
Cpad2
Pad Capacitance for CMOS
Input
0.95
1.2
1.45
pF
8
Notes:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
The V
CCP
referred to in these specifications refers to instantaneous V
CCP
.
3.
Refer to the processor I/O Buffer Models for I/V characteristics.
4.
Measured at 0.1*V
CCP
.
5.
Measured at 0.9*V
CCP
.
6.
For Vin between 0V and V
CCP
. Measured when the driver is tristated.
7.
Cpad1 includes die capacitance only for PWRGOOD. No package parasitics are included.
8.
Cpad2 includes die capacitance for all other CMOS input signals. No package parasitics are included.
Table 8.
AGTL+ Signal Group DC Specifications (Sheet 2 of 2)
Notes:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
V
IL
is defined as the maximum voltage level at a receiving agent that is interpreted as a logical low
value.
3.
V
IH
is defined as the minimum voltage level at a receiving agent that is interpreted as a logical high
value.
4.
V
IH
and V
OH
may experience excursions above V
CCP
. However, input signal drivers must comply with
the signal quality specifications.
5.
This is the pull down driver resistance. Refer to processor I/O Buffer Models for I/V characteristics.
Measured at 0.31*V
CCP
. R
ON
(min) = 0.38*R
TT
,
R
ON
(typ) = 0.45*R
TT
,
R
ON
(max) = 0.52*R
TT
.
6.
GTLREF should be generated from V
CCP
with a 1% tolerance resistor divider. The V
CCP
referred to in
these specifications is the instantaneous V
CCP
.
7.
R
TT
is the on-die termination resistance measured at V
OL
of the AGTL+ output driver. Measured at
0.31*V
CCP
. R
TT
is connected to V
CCP
on die. Refer to processor I/O buffer models for I/V
characteristics.
8.
Specified with on die R
TT
and R
ON
are turned off.
9.
Cpad includes die capacitance only. No package parasitics are included.
10.
R
TT
for PREQ# is between 1.5k
Ω
and 6.0k
Ω