MSI E7500 User Manual - Page 53
DRAM Timing Con CAS Latency Time, Active to Precharge Delay, DRAM RAS# Precharge, DRAM Data
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Chapter 3 modules installed on the system. DRAM Timing Configure Selects whether DRAM timing is controlled by the SPD (Serial Presence Detect) EEPROM on the DRAM module. Setting to By SPD enables DRAM timing to be determined automatically by BIOS based on the configurations on the SPD. Selecting Manual allows users to configure these fields manually. CAS Latency Time This controls the timing delay (in clock cycles) before SDRAM starts a read command after receiving it. Settings: 1.5, 2, 2.5 (clocks). 1.5 (clocks) increases the system performance the most while 2.5 (clocks) provides the most stable performance. Active to Precharge Delay The field specifies the idle cycles before precharging an idle bank. Settings: 7, 6, 5 (clocks). DRAM RAS# to CAS# Delay This field allows you to set the number of cycles for a timing delay between the CAS and RAS strobe signals, used when DRAM is written to, read from or refreshed. Fast speed offers faster performance while slow speed offers more stable performance. Settings: 3, 2 (clocks). DRAM RAS# Precharge This item controls the number of cycles for Row Address Strobe (RAS) to be allowed to precharge. If insufficient time is allowed for the RAS to accumulate its charge before DRAM refresh, refresh may be incomplete and DRAM may fail to retain data. This item applies only when synchronous DRAM is installed in the system. Available settings: 3, 2 (clocks). DRAM Data Integrity Mode Select ECC (Error-Correcting Code) or Non-ECC according to the type of installed DRAM. System BIOS Cacheable Selecting Enabled allows caching of the system BIOS ROM at F0000hFFFFFh, resulting in better system performance. However, if any program writes to this memory area, a system error may result. Setting options: 3-14