MSI H77MA User Guide - Page 51

Adjusted DRAM Frequency, Intel Turbo Boost

Page 51 highlights

Chapter 2 MS-7756 ▶ Intel Turbo Boost Enables or disables Intel Turbo Boost which automatically boosts CPU performance above rated specifications (when applications requests the highest performance state of the processor). ▶ OC Genie Button Operation This item allows you to enable/disable the OC Genie function. ▶ DRAM Frequency This item allows you to adjust the DRAM frequency. Please note the overclocking behavior is not guaranteed. ▶ Adjusted DRAM Frequency It shows the adjusted DRAM frequency. Read-only. ▶ DRAM Timing Mode Select whether DRAM timing is controlled by the SPD (Serial Presence Detect) EEPROM on the DRAM module. Setting to [Auto] enables DRAM timings and the following "Advanced DRAM Configuration" sub-menu to be determined by BIOS based on the configurations on the SPD. Selecting [Link] or [Unlink] allows users to configure the DRAM timings for each channel and the following related "Advanced DRAM Configuration" sub-menu manually. ▶ Advanced DRAM Configuration Press to enter the sub-menu. ▶ Command Rate This setting controls the DRAM command rate. ▶ tCL Controls CAS latency which determines the timing delay (in clock cycles) of starting a read command after receiving data. ▶ tRCD Determines the timing of the transition from RAS (row address strobe) to CAS (column address strobe). The less clock cycles, the faster the DRAM performance. ▶ tRP Controls number of cycles for RAS (row address strobe) to be allowed to pre-charge. If insufficient time is allowed for RAS to accumulate before DRAM refresh, the DRAM may fail to retain data. This item applies only when synchronous DRAM is installed in the system. ▶ tRAS Determines the time RAS (row address strobe) takes to read from and write to memory cell. ▶ tRFC This setting determines the time RFC takes to read from and write to a memory cell. ▶ tWR Determines minimum time interval between end of write data burst and the start of a pre-charge command. Allows sense amplifiers to restore data to cell. 2-11

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2-11
MS-7756
Chapter 2
Intel Turbo Boost
Enables or d±sables Intel Turbo Boost wh±ch automat±cally boosts CPU performance
above rated spec±ficat±ons (when appl±cat±ons requests the h±ghest performance state
of the processor).
OC Gen±e Button Operat±on
Th±s ±tem allows you to enable/d±sable the OC Gen±e funct±on.
DRAM Frequency
Th±s ±tem allows you to adjust the DRAM frequency. Please note the overclock±ng
behav±or ±s not guaranteed.
Adjusted DRAM Frequency
It shows the adjusted DRAM frequency. Read-only.
DRAM T±m±ng Mode
Select whether DRAM t±m±ng ±s controlled by the SPD (Ser±al Presence Detect) EE-
PROM on the DRAM module. Sett±ng to [Auto] enables DRAM t±m±ngs and the follow±ng
“Advanced DRAM Configurat±on” sub-menu to be determ±ned by BIOS based on the
configurat±ons on the SPD. Select±ng [L±nk] or [Unl±nk] allows users to configure the
DRAM t±m±ngs for each channel and the follow±ng related “Advanced DRAM Configura-
t±on” sub-menu manually.
Advanced DRAM Configurat±on
Press <Enter> to enter the sub-menu.
Command Rate
Th±s sett±ng controls the DRAM command rate.
tCL
Controls CAS latency wh±ch determ±nes the t±m±ng delay (±n clock cycles) of start±ng
a read command after rece±v±ng data.
tRCD
Determ±nes the t±m±ng of the trans±t±on from RAS (row address strobe) to CAS (col-
umn address strobe). The less clock cycles, the faster the DRAM performance.
tRP
Controls number of cycles for RAS (row address strobe) to be allowed to pre-charge.
If ±nsuffic±ent t±me ±s allowed for RAS to accumulate before DRAM refresh, the DRAM
may fa±l to reta±n data. Th±s ±tem appl±es only when synchronous DRAM ±s ±nstalled
±n the system.
tRAS
Determ±nes the t±me RAS (row address strobe) takes to read from and wr±te to mem-
ory cell.
tRFC
Th±s sett±ng determ±nes the t±me RFC takes to read from and wr±te to a memory
cell.
tWR
Determ±nes m±n±mum t±me ±nterval between end of wr±te data burst and the start of a
pre-charge command. Allows sense ampl±fiers to restore data to cell.