Intel Q9300 Data Sheet - Page 30

GTL+ Front Side Bus Specifications - drivers

Page 30 highlights

Electrical Specifications Table 2-12. PECI DC Electrical Limits Symbol Definition and Conditions Min Max Units Notes1 Vin Input Voltage Range Vhysteresis Hysteresis -0.15 VTT V 0.1 * VTT - V 2 Vn Negative-edge threshold voltage 0.275 * VTT 0.500 * VTT V Vp Positive-edge threshold voltage 0.550 * VTT 0.725 * VTT V Isource High level output source (VOH = 0.75 * VTT) -6.0 N/A mA Low level output sink Isink (VOL = 0.25 * VTT) 0.5 Ileak+ High impedance state leakage to VTT N/A 1.0 mA 50 µA 3 Ileak- High impedance leakage to GND N/A 10 µA 2 Cbus Bus capacitance per node - 10 pF 4 Vnoise Signal noise immunity above 300 MHz 0.1 * VTT - Vp-p NOTES: 1. VTT supplies the PECI interface. PECI behavior does not affect VTT min/max specifications. Refer to Table 2-3 for VTT specifications. 2. The leakage specification applies to powered devices on the PECI bus. 3. The input buffers use a Schmitt-triggered input design for improved noise immunity. 4. One node is counted for each client and one node for the system host. Extended trace lengths might appear as additional nodes. . 2.7.3.2 GTL+ Front Side Bus Specifications In most cases, termination resistors are not required as these are integrated into the processor silicon. See Table 2-7 for details on which GTL+ signals do not include on-die termination. Valid high and low levels are determined by the input buffers by comparing with a reference voltage called GTLREF. Table 2-13 lists the GTLREF specifications. The GTL+ reference voltage (GTLREF) should be generated on the system board using high precision voltage divider circuits. Table 2-13. GTL+ Bus Resistance Definitions Symbol Parameter Min GTLREF_PU GTLREF_PD RTT COMP[3:0] COMP8 GTLREF pull up resistor GTLREF pull down resistor Termination Resistance COMP Resistance COMP Resistance 57.6 * 0.99 100 * 0.99 45 49.40 24.65 Typ 57.6 100 50 49.90 24.90 Max Units Notes1 57.6 * 1.01 Ω 2 100 * 1.01 Ω 2 55 Ω 3 50.40 Ω 4 25.15 Ω 4 NOTES: 1. Unless otherwise noted, all specifications in this table apply to all processor frequencies. 2. GTLREF is to be generated from VTT by a voltage divider of 1% resistors. If an Variable GTLREF circuit is used on the board the GTLREF lands connected to the Variable GTLREF circuit may require different resistor values. Each GTLREF land must be connected. 3. RTT is the on-die termination resistance measured at VTT/3 of the GTL+ output driver. 4. COMP resistance must be provided on the system board with 1% resistors. COMP[3:0] and COMP8 resistors are to VSS. 30 Datasheet

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Electrical Specifications
30
Datasheet
.
2.7.3.2
GTL+ Front Side Bus Specifications
In most cases, termination resistors are not required as these are integrated into the
processor silicon. See
Table 2-7
for details on which GTL+ signals do not include on-die
termination.
Valid high and low levels are determined by the input buffers by comparing with a
reference voltage called GTLREF.
Table 2-13
lists the GTLREF specifications. The GTL+
reference voltage (GTLREF) should be generated on the system board using high
precision voltage divider circuits.
NOTES:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
GTLREF is to be generated from VTT by a voltage divider of 1% resistors. If an Variable
GTLREF circuit is used on the board the GTLREF lands connected to the Variable GTLREF
circuit may require different resistor values. Each GTLREF land must be connected.
3.
R
TT
is the on-die termination resistance measured at V
TT
/3 of the GTL+ output driver.
4.
COMP resistance must be provided on the system board with 1% resistors. COMP[3:0] and
COMP8 resistors are to V
SS
.
Table 2-12.
PECI DC Electrical Limits
Symbol
Definition and Conditions
Min
Max
Units
Notes
1
NOTES:
1. V
TT
supplies the PECI interface. PECI behavior does not affect V
TT
min/max specifications. Refer
to
Table 2-3
for V
TT
specifications.
V
in
Input Voltage Range
-0.15
V
TT
V
V
hysteresis
Hysteresis
0.1 * V
TT
V
2
2.
The leakage specification applies to powered devices on the PECI bus.
V
n
Negative-edge threshold voltage
0.275 * V
TT
0.500 * V
TT
V
V
p
Positive-edge threshold voltage
0.550 * V
TT
0.725 * V
TT
V
I
source
High level output source
(V
OH
= 0.75 * V
TT
)
-6.0
N/A
mA
I
sink
Low level output sink
(V
OL
= 0.25 * V
TT
)
0.5
1.0
mA
I
leak+
High impedance state leakage to V
TT
N/A
50
μA
3
3.
The input buffers use a Schmitt-triggered input design for improved noise immunity.
4. One node is counted for each client and one node for the system host. Extended trace lengths
might appear as additional nodes.
I
leak-
High impedance leakage to GND
N/A
10
μA
2
C
bus
Bus capacitance per node
10
pF
4
V
noise
Signal noise immunity above 300 MHz
0.1 * V
TT
V
p-p
Table 2-13.
GTL+ Bus Resistance Definitions
Symbol
Parameter
Min
Typ
Max
Units
Notes
1
GTLREF_PU
GTLREF pull up resistor
57.6 * 0.99
57.6
57.6 * 1.01
Ω
2
GTLREF_PD
GTLREF pull down resistor
100 * 0.99
100
100 * 1.01
Ω
2
R
TT
Termination Resistance
45
50
55
Ω
3
COMP[3:0]
COMP Resistance
49.40
49.90
50.40
Ω
4
COMP8
COMP Resistance
24.65
24.90
25.15
Ω
4