MSI KT4V User Guide - Page 60

MS-6712 ATX Mainboard SDRAM Frequency, SDRAM CAS# Latency, Row Precharge Time, RAS Pulse Width, RAS to CAS Delay and SDRAM Bank Interleave automatically to be determined by BIOS based on the configurations on the SPD. Selecting User allows users to configure these fields manually. SDRAM Frequency Use this item to configure the clock frequency of the installed SDRAM. Settings options: 200MHz, 266MHz, 333MHz, 400MHz*, Auto. *See Glossary: Recommended DDR400 Modules for details. SDRAM CAS# Latency This controls the timing delay (in clock cycles) before SDRAM starts a read command after receiving it. Settings: Auto, 1.5, 2, 2.5, 3 (clocks). 1.5 (clocks) increases the system performance the most while 3 (clocks) provides the most stable performance. Row Precharge Time This item controls the number of cycles for Row Address Strobe (RAS) to be allowed to precharge. If insufficient time is allowed for the RAS to accumulate its charge before DRAM refresh, refresh may be incomplete and DRAM may fail to retain data. This item applies only when synchronous DRAM is installed in the system. Available settings: 2T, 3T, 4T, 5T. RAS Pulse Width This setting allows you to select the number of clock cycles allotted for the RAS pulse width, according to DRAM specifications. The less the clock cycles, the faster the DRAM performance. Settings: 6T, 7T, 8T, 9T. RAS to CAS Delay When DRAM is refreshed, both rows and columns are addressed separately. This setup item allows you to determine the timing of the transition from RAS (row address strobe) to CAS (column address strobe). The less the clock cycles, the faster the DRAM performance. Setting options: 2T, 3T, 4T, 5T. Bank Interleave This field selects 2-bank or 4-bank interleave for the installed SDRAM. 3-14