Intel E5472 Data Sheet - Page 38

The Quad-Core Intel® Xeon® Processor 5400 Series can tolerate short transient

Page 38 highlights

Quad-Core Intel® Xeon® Processor 5400 Series Electrical Specifications Table 2-16. CMOS Signal Input/Output Group and TAP Signal Group DC Specifications Symbol VIL VIH VOL VOH IOL IOH ILI Parameter Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Output Low Current Output High Current Input Leakage Current Min -0.10 0.7 * VTT -0.10 0.9 * VTT 1.70 1.70 N/A Typ 0.00 VTT 0 VTT N/A N/A N/A Max 0.3 * VTT VTT + 0.1 0.1 * VTT VTT + 0.1 4.70 4.70 ± 100 Units V V V V mA mA μA Notes1 2,3 2 2 2 4 5 6 Notes: 1. Unless otherwise noted, all specifications in this table apply to all processor frequencies. 2. The VTT referred to in these specifications refers to instantaneous VTT. 3. Refer to the processor I/O Buffer Models for I/V characteristics. 4. Measured at 0.1*VTT. 5. Measured at 0.9*VTT. 6. For Vin between 0 V and VTT. Measured when the driver is tristated. Table 2-17. Open Drain Output Signal Group DC Specifications Symbol VOL VOH IOL ILO Parameter Output Low Voltage Output High Voltage Output Low Current Leakage Current Min 0 0.95 * VTT 16 N/A Typ N/A VTT N/A N/A Max 0.20 * VTT 1.05 * VTT 50 ± 200 Units V V mA μA Notes1 3 2 4 Notes: 1. Unless otherwise noted, all specifications in this table apply to all processor frequencies. 2. Measured at 0.2*VTT. 3. VOH is determined by value of the external pullup resistor to VTT. Refer to platform design guide for details. 4. For VIN between 0 V and VOH. 2.13.2 VCC Overshoot Specification The Quad-Core Intel® Xeon® Processor 5400 Series can tolerate short transient overshoot events where VCC exceeds the VID voltage when transitioning from a highto-low current load condition. This overshoot cannot exceed VID + VOS_MAX (VOS_MAX is the maximum allowable overshoot above VID). These specifications apply to the processor die voltage as measured across the VCC_DIE_SENSE and VSS_DIE_SENSE lands and across the VCC_DIE_SENSE2 and VSS_DIE_SENSE2 lands. Table 2-18. VCC Overshoot Specifications Symbol Parameter Min VOS_MAX TOS_MAX Magnitude of VCC overshoot above VID Time duration of VCC overshoot above VID Max 50 25 Units mV µs Figure 2-11 2-11 Notes 38

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Quad-Core Intel® Xeon® Processor 5400 Series Electrical Specifications
38
Notes:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
The V
TT
referred to in these specifications refers to instantaneous V
TT
.
3.
Refer to the processor I/O Buffer Models for I/V characteristics.
4.
Measured at 0.1*V
TT
.
5.
Measured at 0.9*V
TT
.
6.
For Vin between 0 V and V
TT
. Measured when the driver is tristated.
Notes:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
Measured at 0.2*V
TT
.
3.
V
OH
is determined by value of the external pullup resistor to V
TT
. Refer to platform design guide for details.
4.
For V
IN
between 0 V and V
OH
.
2.13.2
V
CC
Overshoot Specification
The Quad-Core Intel® Xeon® Processor 5400 Series can tolerate short transient
overshoot events where V
CC
exceeds the VID voltage when transitioning from a high-
to-low current load condition. This overshoot cannot exceed VID + V
OS_MAX
(V
OS_MAX
is
the maximum allowable overshoot above VID). These specifications apply to the
processor die voltage as measured across the VCC_DIE_SENSE and VSS_DIE_SENSE
lands and across the VCC_DIE_SENSE2 and VSS_DIE_SENSE2 lands.
Table 2-16.
CMOS Signal Input/Output Group and TAP Signal Group
DC Specifications
Symbol
Parameter
Min
Typ
Max
Units
Notes
1
V
IL
Input Low Voltage
-0.10
0.00
0.3 * V
TT
V
2,3
V
IH
Input High Voltage
0.7 * V
TT
V
TT
V
TT
+ 0.1
V
2
V
OL
Output Low Voltage
-0.10
0
0.1 * V
TT
V
2
V
OH
Output High Voltage
0.9 * V
TT
V
TT
V
TT
+ 0.1
V
2
I
OL
Output Low Current
1.70
N/A
4.70
mA
4
I
OH
Output High Current
1.70
N/A
4.70
mA
5
I
LI
Input Leakage Current
N/A
N/A
± 100
μ
A
6
Table 2-17.
Open Drain Output Signal Group DC Specifications
Symbol
Parameter
Min
Typ
Max
Units
Notes
1
V
OL
Output Low Voltage
0
N/A
0.20 * V
TT
V
V
OH
Output High Voltage
0.95 * V
TT
V
TT
1.05 * V
TT
V
3
I
OL
Output Low Current
16
N/A
50
mA
2
I
LO
Leakage Current
N/A
N/A
± 200
μ
A
4
Table 2-18.
V
CC
Overshoot Specifications
Symbol
Parameter
Min
Max
Units
Figure
Notes
V
OS_MAX
Magnitude of V
CC
overshoot above VID
50
mV
2-11
T
OS_MAX
Time duration of V
CC
overshoot above VID
25
μs
2-11