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Intel BX80605X3430 Data Sheet - Page 74

Table 7-8., DDR3 Signal Group DC Specifications

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Electrical Specifications Table 7-8. DDR3 Signal Group DC Specifications Symbol VIL VIH VOL VOH RON RON RON RON Data ODT ILI SM_RCOMP0 SM_RCOMP1 SM_RCOMP2 Parameter Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage DDR3 Clock Buffer On Resistance DDR3 Command Buffer On Resistance DDR3 Control Buffer On Resistance DDR3 Data Buffer On Resistance On-Die Termination for Data Signals Input Leakage Current COMP Resistance COMP Resistance COMP Resistance Alpha Group (e,f) (e,f) (c,d,e,f) (c,d,e,f) - - - - (d) - (t) (t) (t) Min Typ Max Units Notes1 - - 0.43*VDDQ V 2,4 0.57*VDDQ - - V 3 - ((VRDODNQ+R/ V2T)T*_T(ERROMN))/ - 6 - (RVODND/Q(R-ON((+VRDVDTQT_/TE2R)M*)) - V 4,6 21 - 36  5 20 - 31  5 20 - 31  5 21 - 36  5 93.5 - 99 24.7 128.7 - - 100 24.9 130 126.5  ± 1 mA 101  7 25.1  7 131.3  7 Notes: 1. Unless otherwise noted, all specifications in this table apply to all processor frequencies. 2. VIL is defined as the maximum voltage level at a receiving agent that will be interpreted as a logical low value. 3. VIH is defined as the minimum voltage level at a receiving agent that will be interpreted as a logical high value. 4. VIH and VOH may experience excursions above VDDQ. However, input signal drivers must comply with the signal quality specifications. 5. This is the pull down driver resistance. 6. RVTT_TERM is the termination on the DIMM and is not controlled by the processor. 7. COMP resistance must be provided on the system board with 1% resistors. COMP resistors are to VSS. 74 Datasheet, Volume 1

Section	Page
1 Introduction	9
1.1 Processor Feature Details	11
1.1.1 Supported Technologies	11
1.2 Interfaces	11
1.2.1 System Memory Support	11
1.2.2 PCI Express*	12
1.2.3 Direct Media Interface (DMI)	13
1.2.4 Platform Environment Control Interface (PECI)	14
1.3 Power Management Support	14
1.3.1 Processor Core	14
1.3.2 System	14
1.3.3 Memory Controller	14
1.3.4 PCI Express*	14
1.4 Thermal Management Support	15
1.5 Package	15
1.6 Terminology	15
1.7 Related Documents	17
2 Interfaces	19
2.1 System Memory Interface	19
2.1.1 System Memory Technology Supported	19
2.1.2 System Memory Timing Support	21
2.1.3 System Memory Organization Modes	21
2.1.3.1 Single-Channel Mode	21
2.1.3.2 Dual-Channel Mode—Intel® Flex Memory Technology Mode	22
2.1.4 Rules for Populating Memory Slots	23
2.1.5 Technology Enhancements of Intel® Fast Memory Access (Intel® FMA)	24
2.1.5.1 Just-in-Time Command Scheduling	24
2.1.5.2 Command Overlap	24
2.1.5.3 Out-of-Order Scheduling	24
2.1.6 System Memory Pre-Charge Power Down Support Details	24
2.2 PCI Express* Interface	25
2.2.1 PCI Express* Architecture	25
2.2.1.1 Transaction Layer	26
2.2.1.2 Data Link Layer	26
2.2.1.3 Physical Layer	26
2.2.2 PCI Express* Configuration Mechanism	27
2.2.3 PCI Express* Ports and Bifurcation	28
2.2.3.1 PCI Express* Bifurcated Mode	28
2.3 Direct Media Interface (DMI)	28
2.3.1 DMI Error Flow	28
2.3.2 Processor/PCH Compatibility Assumptions	28
2.3.3 DMI Link Down	28
2.4 Platform Environment Control Interface (PECI)	29
2.5 Interface Clocking	29
2.5.1 Internal Clocking Requirements	29
3 Technologies	31
3.1 Intel® Virtualization Technology	31
3.1.1 Intel® VT-x Objectives	31
3.1.2 Intel® VT-x Features	31
3.1.3 Intel® VT-d Objectives	32
3.1.4 Intel® VT-d Features	32
3.1.5 Intel® VT-d Features Not Supported	33
3.2 Intel® Trusted Execution Technology (Intel® TXT)	33
3.3 Intel® Hyper-Threading Technology	34
3.4 Intel® Turbo Boost Technology	34
4 Power Management	35
4.1 ACPI States Supported	35
4.1.1 System States	35
4.1.2 Processor Core/Package Idle States	35
4.1.3 Integrated Memory Controller States	35
4.1.4 PCI Express* Link States	36
4.1.5 Interface State Combinations	36
4.2 Processor Core Power Management	36
4.2.1 Enhanced Intel® SpeedStep® Technology	37
4.2.2 Low-Power Idle States	37
4.2.3 Requesting Low-Power Idle States	39
4.2.4 Core C-states	39
4.2.4.1 Core C0 State	40
4.2.4.2 Core C1/C1E State	40
4.2.4.3 Core C3 State	40
4.2.4.4 Core C6 State	40
4.2.4.5 C-State Auto-Demotion	40
4.2.5 Package C-States	41
4.2.5.1 Package C0	42
4.2.5.2 Package C1/C1E	42
4.2.5.3 Package C3 State	43
4.2.5.4 Package C6 State	43
4.3 IMC Power Management	43
4.3.1 Disabling Unused System Memory Outputs	43
4.3.2 DRAM Power Management and Initialization	44
4.3.2.1 Initialization Role of CKE	44
4.3.2.2 Conditional Self-Refresh	44
4.3.2.3 Dynamic Power Down Operation	44
4.3.2.4 DRAM I/O Power Management	45
4.4 PCI Express* Power Management	45
5 Thermal Management	47
6 Signal Description	49
6.1 System Memory Interface	50
6.2 Memory Reference and Compensation	52
6.3 Reset and Miscellaneous Signals	52
6.4 PCI Express* Based Interface Signals	53
6.5 DMI—Processor to PCH Serial Interface	53
6.6 PLL Signals	54
6.7 Intel® Flexible Display Interface Signals	54
6.8 JTAG/ITP Signals	55
6.9 Error and Thermal Protection	56
6.10 Power Sequencing	57
6.11 Processor Core Power Signals	57
6.12 Graphics and Memory Core Power Signals	59
6.13 Ground and NCTF	60
6.14 Processor Internal Pull Up/Pull Down	60
7 Electrical Specifications	61
7.1 Power and Ground Lands	61
7.2 Decoupling Guidelines	61
7.2.1 Voltage Rail Decoupling	61
7.3 Processor Clocking (BCLK[0], BCLK#[0])	62
7.3.1 PLL Power Supply	62
7.4 VCC Voltage Identification (VID)	62
7.5 Reserved or Unused Signals	66
7.6 Signal Groups	66
7.7 Test Access Port (TAP) Connection	69
7.8 Absolute Maximum and Minimum Ratings	69
7.9 DC Specifications	70
7.9.1 Voltage and Current Specifications	70
7.10 Platform Environmental Control Interface (PECI) DC Specifications	77
7.10.1 DC Characteristics	77
7.10.2 Input Device Hysteresis	78
8 Processor Land and Signal Information	79

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Electrical Specifications

Datasheet, Volume 1

Notes:

Unless otherwise noted, all specifications in this table apply to all processor frequencies.

is defined as the maximum voltage level at a receiving agent that will be interpreted as a logical low value.

is defined as the minimum voltage level at a receiving agent that will be interpreted as a logical high value.

and V

may experience excursions above V

DDQ

. However, input signal drivers must comply with the signal quality

specifications.

This is the pull down driver resistance.

VTT_TERM

is the termination on the DIMM and is not controlled by the processor.

COMP resistance must be provided on the system board with 1% resistors. COMP resistors are to V

Table 7-8.

DDR3 Signal Group DC Specifications

Symbol

Parameter

Alpha

Group

Min

Typ

Max

Units

Notes

Input Low Voltage

(e,f)

—

0.43*V

DDQ

2,4

Input High Voltage

(e,f)

0.57*V

DDQ

—

Output Low Voltage

(c,d,e,f)

—

DDQ

/ 2)* (R

VTT_TERM

))

—

Output High Voltage

(c,d,e,f)

—

DDQ

– ((V

DDQ

/ 2)*

/(R

VTT_TERM

))

—

4,6

DDR3 Clock Buffer On

Resistance

—



DDR3 Command Buffer On

Resistance

—



DDR3 Control Buffer On

Resistance

—



DDR3 Data Buffer On

Resistance

—



Data ODT

On-Die Termination for

Data Signals

(d)

93.5

—

126.5



Input Leakage Current

—

± 1

SM_RCOMP0

COMP Resistance

(t)

100

101



SM_RCOMP1

COMP Resistance

(t)

24.7

24.9

25.1



SM_RCOMP2

COMP Resistance

(t)

128.7

130

131.3

