Intel BX80601920 Data Sheet - Page 29

VCC_SENSE and VSS_SENSE lands.

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Electrical Specifications Table 2-15. Control Sideband Signal Group DC Specifications Symbol Parameter VIL Input Low Voltage VIH Input High Voltage VOL Output Low Voltage VOH Ron Ron ILI COMP0 Output High Voltage Buffer on Resistance Buffer on Resistance for VID[7:0] Input Leakage Current COMP Resistance Min - 0.76 * VTTA - VTTA 10 - - 49.4 Typ - - - - - 100 - 49.9 Max 0.64 * VTTA - VTT+A *RsRyOs_Nte/rm(R) ON - 18 - ± 200 50.40 Units V V V V   A  Notes: 1. Unless otherwise noted, all specifications in this table apply to all processor frequencies. 2. The VTTA referred to in these specifications refers to instantaneous VTTA. 3. For Vin between 0 V and VTTA. Measured when the driver is tristated. 4. VIH and VOH may experience excursions above VTT. 5. COMP resistance must be provided on the system board with 1% resistors. Notes1 2 2 2,4 2,4 3 5 2.11.2 VCC Overshoot Specification The processor can tolerate short transient overshoot events where VCC exceeds the VID voltage when transitioning from a high-to-low current load condition. This overshoot cannot exceed VID + VOS_MAX (VOS_MAX is the maximum allowable overshoot above VID). These specifications apply to the processor die voltage as measured across the VCC_SENSE and VSS_SENSE lands. Table 2-16. VCC Overshoot Specifications Symbol Parameter Min VOS_MAX Magnitude of VCCP overshoot above VID - TOS_MAX Time duration of VCCP overshoot above VID - Max 50 25 Units mV µs Figure 2-5 2-5 Notes Datasheet 29

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Datasheet
29
Electrical Specifications
Notes:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
The V
TTA
referred to in these specifications refers to instantaneous V
TTA
.
3.
For Vin between 0 V and V
TTA
. Measured when the driver is tristated.
4.
V
IH
and V
OH
may experience excursions above V
TT
.
5.
COMP resistance must be provided on the system board with 1% resistors.
2.11.2
V
CC
Overshoot Specification
The processor can tolerate short transient overshoot events where V
CC
exceeds the VID
voltage when transitioning from a high-to-low current load condition. This overshoot
cannot exceed VID + V
OS_MAX
(V
OS_MAX
is the maximum allowable overshoot above
VID). These specifications apply to the processor die voltage as measured across the
VCC_SENSE and VSS_SENSE lands.
Table 2-15.
Control Sideband Signal Group DC Specifications
Symbol
Parameter
Min
Typ
Max
Units
Notes
1
V
IL
Input Low Voltage
—
—
0.64
*
V
TTA
V
2
V
IH
Input High Voltage
0.76
*
V
TTA
—
—
V
2
V
OL
Output Low Voltage
—
—
V
TTA
* R
ON
/ (R
ON
+ R
sys_term
)
V
2,4
V
OH
Output High Voltage
V
TTA
—
—
V
2,4
Ron
Buffer on Resistance
10
—
18
Ron
Buffer on Resistance for
VID[7:0]
—
100
—
I
LI
Input Leakage Current
—
—
± 200
A
3
COMP0
COMP Resistance
49.4
49.9
50.40
5
Table 2-16.
V
CC
Overshoot Specifications
Symbol
Parameter
Min
Max
Units
Figure
Notes
V
OS_MAX
Magnitude of V
CCP
overshoot above VID
—
50
mV
2-5
T
OS_MAX
Time duration of V
CCP
overshoot above VID
—
25
μs
2-5