Intel VC820 Design Guide - Page 197

Un-used Gates, Decoupling

Page 197 highlights

8 7 6 5 4 3 2 1 Decoupling MCH Decoupling D VCC1_8 VCC1_8 ICH Decoupling VCC3_3 82559 Decoupling. VCC3_3SBY 0.1UF 0.1UF 0.1UF 0.1UF C290 C88 C105 C60 C29 C30 C252 C230 C224 C254 C248 C232 C231 C253 C260 C184 C265 C257 C197 C221 C202 C213 C156 C201 C212 C157 0.1UF 0.1UF 0.1UF 0.1UF 0.01UF 0.1UF 0.1UF 0.1UF 0.01UF 0.1UF 0.1UF 0.1UF 0.01UF 0.01UF Place these caps on solder side 0.01UF 0.01UF 4.7UF 4.7UF 0.1UF VDDQ C 0.01UF 0.1UF 0.01UF 0.01UF 0.01UF C258 C219 C285 C210 C303 C366 C365 C302 C289 C284 C288 C235 C264 C226 RIMM Decoupling D VCC2_5SBY VCC2_5SBY VCMOS1_8SBY 100UF 100UF 100UF 100UF 100UF 100UF 100UF 100UF 0.1UF 0.1UF 0.1UF 0.1UF 0.1UF 0.1UF Place 100uF caps, 0.1 ohm ESR, among RIMM connectors. Place a VCMOS1_8SBY 0.1uF cap at each RIMM. C C262 C261 For chipset decoupling, use 0.1UF and 0.01UF decoupling capacitor at each corner of the device. If there is room, add 0.01UF capacitors in the middle of each quad. Place these caps on solder side VDDQ Un-used Gates VCC3_3SBY VCC3_3SBY 9 14 U3 8 10 SN74LVC087A U15 14 11 10 74LVC14A7 VCC3_3 C343 C344 0.01UF 0.01UF B U15 14 12 14 U3 13 12 U19 VCC 14 11 13 74LVC14A7 3 4 B 7 SN74LVC087A GND SN74LVC07A C166 0.01UF VCC3_3SBY VCC3_3SBY VCC5SBY U19 VCC 14 11 10 C367 C162 0.01UF 7 U20 14VCC GND 9 8 SN74LVC07A 0.01UF U14 VCC 14 9 8 U18 74LS1132 14VCC 3 SN74LVC06A7 GND 2 U19 VCC 7 14 GND SN74LVC07A 7 GND U20 14VCC 13 12 C368 0.01UF 11 10 7 GND U14 VCC U18 SN74LVC06A7 GND SN74LVC07A 14 11 10 74LS11232 14VCC 11 A GND SN74LVC07A 7 13 7 GND U20 14VCC 13 12 A Place VDDQ capacitors within SN74LVC06A7 GND 70 mils of outer balls of MCH. TITLE: INTEL(R) 820 CHIPSET CUSTOMER REFERENCE BOARD REV: DECOUPLING 1.01 R PCD PLATFORM DESIGN DRAWN BY: PROJECT: 1900 PRAIRIE CITY ROAD FOLSOM, CALIFORNIA 95630 LAST REVISED: SHEET: 11-30-1999_10:26 34 OF 36 8 7 6 5 4 3 2 1

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11-30-1999_10:26
DECOUPLING
34
C365
0.1UF
0.1UF
C366
0.1UF
C221
0.1UF
C60
C29
0.1UF
0.1UF
C30
C156
0.01UF
0.01UF
C213
0.1UF
C253
0.1UF
C231
C232
0.1UF
C248
0.1UF
C254
0.01UF
0.01UF
C224
C230
0.01UF
C252
0.01UF
0.1UF
C257
C265
0.1UF
0.1UF
C184
C260
0.1UF
C210
100UF
100UF
C285
C219
100UF
C288
100UF
100UF
C284
C289
100UF
100UF
C303
100UF
C302
C226
0.1UF
C105
0.1UF
4.7UF
C88
C290
4.7UF
U3
10
9
8
7
14
U3
14
7
11
12
13
U15
14
7
10
11
U15
13
12
7
14
U20
8
9
14
7
U20
7
14
11
10
U20
12
13
14
7
U14
14
7
9
8
U18
12
13
11
14
7
U14
10
11
7
14
U19
4
3
7
14
U19
14
7
11
10
U19
12
13
7
14
U18
7
14
3
2
1
C202
0.01UF
C212
0.1UF
C157
0.1UF
0.1UF
C197
0.1UF
C235
C264
0.1UF
0.01UF
C162
C258
0.1UF
0.01UF
C368
C201
0.01UF
0.01UF
C367
0.01UF
C166
C343
0.01UF
0.01UF
C344
0.01UF
C261
C262
0.01UF
PCD PLATFORM DESIGN
REV:
DRAWN BY:
LAST REVISED:
PROJECT:
SHEET:
FOLSOM, CALIFORNIA 95630
1900 PRAIRIE CITY ROAD
8
7
6
5
4
3
2
1
A
B
C
D
1
2
3
4
5
6
7
8
D
C
B
A
1.01
TITLE: INTEL(R) 820 CHIPSET CUSTOMER REFERENCE BOARD
OF 36
R
VCC5SBY
VCC3_3
VCMOS1_8SBY
VCC2_5SBY
VCC2_5SBY
SN74LVC08A
SN74LVC08A
74LVC14A
74LVC14A
VCC3_3SBY
SN74LVC06A
GND
VCC
SN74LVC06A
GND
VCC
SN74LVC06A
GND
VCC
SN74LVC07A
GND
VCC
74LS132
VCC
GND
VCC3_3SBY
SN74LVC07A
GND
VCC
VCC3_3SBY
SN74LVC07A
GND
VCC
SN74LVC07A
GND
VCC
SN74LVC07A
GND
VCC
74LS132
VCC
GND
VCC3_3SBY
VCC3_3
VCC3_3SBY
VCC1_8
VDDQ
VCC1_8
VDDQ
Place these caps on solder side
70 mils of outer balls of MCH.
Place VDDQ capacitors within
For chipset decoupling, use 0.1UF and
0.01UF decoupling capacitor at each
corner of the device.
If there is room,
add 0.01UF capacitors in the middle
of each quad.
Place a VCMOS1_8SBY 0.1uF cap at each RIMM.
Un-used Gates
Place 100uF caps, 0.1 ohm ESR, among RIMM connectors.
RIMM Decoupling
82559 Decoupling.
ICH Decoupling
Decoupling
Place these caps on solder side
MCH Decoupling