Intel VC820 Design Guide - Page 241
Modified HUBREF circuit, deleted R222, FOLSOM, CALIFORNIA 95630
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8 7 6 5 4 Revision History D Pg 8 Modified MCH_AGPREF circuit, changed 432 ohm to 1K ohm and 62 ohm to 80.6 ohm. Changed value of capacitor C194 from 0.1uF to 0.01uF. Pg 10 Modified HUBREF circuit, deleted R222, R223 & C217, changed C218 from 470pF to 0.1uF. Pg 13 Modified RIMM connectors to eliminate 3.3V, added 0.1uF decoup caps to SVDDA & SVDDB on each RIMM. Pg 35 Modified CMD and SCK termination values. Removed 470pF capacitors, Changed 93 ohm to 90.9 ohm, and changed 39 ohm to 39.2 ohm resistors. Pg 36 Deleted 3.3V decoupling for RIMM connectors. Added solder side decoup for MCH. Changed VDDQ cap values from 0.1uF to 0.01uF. C 3 2 1 D C B B A A TITLE: INTEL(R) 820 CHIPSET DUAL PROCESSOR CUSTOMER REFERENCE BOARD REV: REVISION HISTORY 3.03 R PCD PLATFORM DESIGN DRAWN BY: PROJECT: 1900 PRAIRIE CITY ROAD FOLSOM, CALIFORNIA 95630 LAST REVISED: SHEET: 11-29-1999_14:44 38 OF 38 8 7 6 5 4 3 2 1